EP 2342738 A4 20130417 - USE OF SURFACTANT/DEFOAMER MIXTURES FOR ENHANCED METALS LOADING AND SURFACE PASSIVATION OF SILICON SUBSTRATES
Title (en)
USE OF SURFACTANT/DEFOAMER MIXTURES FOR ENHANCED METALS LOADING AND SURFACE PASSIVATION OF SILICON SUBSTRATES
Title (de)
VERWENDUNG VON TENSID-/ENTSCHÄUMUNGSMISCHUNGEN FÜR ERHÖHTE METALLLADUNG UND OBERFLÄCHENPASSIVIERUNG VON SILIZIUMSUBSTRATEN
Title (fr)
EMPLOI DE MELANGES TENSIOACTIF/AGENT ANTIMOUSSE POUR AMELIORER LA CHARGE METALLIQUE ET LA PASSIVATION DE SURFACE DE SUBSTRATS DE SILICIUM
Publication
Application
Priority
- US 2009059199 W 20091001
- US 10235208 P 20081002
- US 14498609 P 20090115
Abstract (en)
[origin: WO2010039936A2] Removal compositions and processes for removing at least one material layer from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves substantial removal of the material(s) to be removed while not damaging the layers to be retained, for reclaiming, reworking, recycling and / or reuse of said structure.
IPC 8 full level
C09K 13/08 (2006.01); C23F 1/18 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01)
CPC (source: EP KR)
C09K 13/08 (2013.01 - EP KR); C11D 1/00 (2013.01 - EP); C11D 1/008 (2013.01 - EP KR); C11D 1/72 (2013.01 - EP KR); C11D 1/78 (2013.01 - EP KR); C11D 3/0026 (2013.01 - EP KR); C11D 3/042 (2013.01 - EP); C11D 3/2068 (2013.01 - EP KR); C11D 3/37 (2013.01 - EP); C11D 3/3707 (2013.01 - EP KR); C23F 1/18 (2013.01 - EP KR); H01L 21/02032 (2013.01 - EP KR); H01L 21/31111 (2013.01 - EP); H01L 21/32134 (2013.01 - EP KR); C11D 2111/22 (2024.01 - EP KR)
Citation (search report)
- [I] EP 1975987 A2 20081001 - ADVANCED TECH MATERIALS [US]
- [A] US 2004018453 A1 20040129 - ANZURES EDGARDO [US], et al
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
DOCDB simple family (publication)
WO 2010039936 A2 20100408; WO 2010039936 A3 20100701; CN 102217042 A 20111012; EP 2342738 A2 20110713; EP 2342738 A4 20130417; JP 2012504871 A 20120223; KR 20110063845 A 20110614; TW 201022148 A 20100616; TW I485110 B 20150521
DOCDB simple family (application)
US 2009059199 W 20091001; CN 200980146332 A 20091001; EP 09818502 A 20091001; JP 2011530216 A 20091001; KR 20117009703 A 20091001; TW 98133617 A 20091002