EP 2342786 A2 20110713 - SURFACE-EMITTING SEMICONDUCTOR LASER COMPONENT HAVING A VERTICAL EMISSION DIRECTION
Title (en)
SURFACE-EMITTING SEMICONDUCTOR LASER COMPONENT HAVING A VERTICAL EMISSION DIRECTION
Title (de)
OBERFLÄCHENEMITTIERENDES HALBLEITERLASERBAUELEMENT MIT EINER VERTIKALEN EMISSIONSRICHTUNG
Title (fr)
COMPOSANT DE LASER A SEMI-CONDUCTEUR EMETTANT PAR LA SURFACE MUNI D'UN DISPOSITIF D'EMISSION VERTICAL
Publication
Application
Priority
- DE 2009001214 W 20090826
- DE 102008055941 A 20081105
Abstract (en)
[origin: WO2010051784A2] The invention relates to a surface-emitting semiconductor laser component having a vertical emission direction, comprising a semiconductor body which has a first resonator mirror (2), a second resonator mirror (4), and an active zone (3) suited to generate radiation. The first resonator mirror (2) comprises alternating stacked first layers (2a) having a first composition and second layers (2b) having a second composition. The first layers (2a) have oxidized regions (8a). Furthermore, at least the first layers (2a) each comprise a doping agent, wherein at least one layer (21a) of the first layers (2a) has a doping agent concentration that differs from the doping agent concentration of the other first layers (2a).
IPC 8 full level
H01S 5/183 (2006.01)
CPC (source: EP KR US)
H01S 5/183 (2013.01 - KR); H01S 5/18333 (2013.01 - EP US); H01S 5/18313 (2013.01 - EP US)
Citation (search report)
See references of WO 2010051784A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
Designated extension state (EPC)
AL BA RS
DOCDB simple family (publication)
WO 2010051784 A2 20100514; WO 2010051784 A3 20100923; CN 102204039 A 20110928; DE 102008055941 A1 20100617; EP 2342786 A2 20110713; JP 2012507876 A 20120329; KR 20110093839 A 20110818; US 2012134382 A1 20120531
DOCDB simple family (application)
DE 2009001214 W 20090826; CN 200980144049 A 20090826; DE 102008055941 A 20081105; EP 09776120 A 20090826; JP 2011534999 A 20090826; KR 20117012746 A 20090826; US 200913127126 A 20090826