EP 2345062 A1 20110720 - METHODS OF FORMING MULTI-DOPED JUNCTIONS ON A SUBSTRATE
Title (en)
METHODS OF FORMING MULTI-DOPED JUNCTIONS ON A SUBSTRATE
Title (de)
VERFAHREN ZUM BILDEN VON MEHRFACH DOTIERTEN SPERRSCHICHTEN AUF EINEM SUBSTRAT
Title (fr)
PROCÉDÉS DE FORMATION DE JONCTIONS MULTIDOPÉES SUR UN SUBSTRAT
Publication
Application
Priority
US 2008081558 W 20081029
Abstract (en)
[origin: WO2010050936A1] A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron, the substrate including a first substrate surface with a first surface region and a second surface region. The method also includes depositing a first set of nanoparticles on the first surface region, the first set of nanoparticles including a first dopant. The method further includes heating the substrate in an inert ambient to a first temperature and for a first time period creating a first densified film, and further creating a first diffused region with a first diffusion depth in the substrate beneath the first surface region. The method also includes exposing the substrate to a diffusion gas including phosphorous at a second temperature and for a second time period creating a PSG layer on the first substrate surface and further creating a second diffused region with a second diffusion depth in the substrate beneath the second surface region, wherein the first diffused region is proximate to the second diffused region. The method further includes exposing the substrate to a oxidizing gas at a third temperature and for a third time period, wherein a SiO2 layer is formed between the PSG layer and the substrate surface, wherein the first diffusion depth is substantially greater than the second diffusion depth.
IPC 8 full level
H01L 21/225 (2006.01); H01L 21/265 (2006.01); H01L 31/04 (2014.01); H01L 31/18 (2006.01)
CPC (source: EP KR)
H01L 21/2254 (2013.01 - EP); H01L 21/265 (2013.01 - KR); H01L 31/04 (2013.01 - KR); H01L 31/1804 (2013.01 - EP); Y02E 10/50 (2013.01 - EP); Y02P 70/50 (2015.11 - EP)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA MK RS
DOCDB simple family (publication)
WO 2010050936 A1 20100506; CN 102246275 A 20111116; CN 102246275 B 20140430; EP 2345062 A1 20110720; EP 2345062 A4 20120613; JP 2012507855 A 20120329; KR 20110089291 A 20110805
DOCDB simple family (application)
US 2008081558 W 20081029; CN 200880132247 A 20081029; EP 08877854 A 20081029; JP 2011534467 A 20081029; KR 20117011822 A 20081029