EP 2345750 B1 20190102 - THIN FILM-FORMING SPUTTERING SYSTEMS
Title (en)
THIN FILM-FORMING SPUTTERING SYSTEMS
Title (de)
DÜNNSCHICHTBILDENDE SPUTTERVORRICHTUNGEN
Title (fr)
DISPOSITIFS DE PULVÉRISATION POUR LA FORMATION DE FILMS MINCES
Publication
Application
Priority
- JP 2009004092 W 20090825
- JP 2008218946 A 20080828
Abstract (en)
[origin: EP2345750A1] An objective of the present invention is to provide a thin-film forming sputtering system capable of a sputtering process at a high rate. A thin-film forming sputtering system 10 includes: a vacuum container 11; a target holder 13 located inside the vacuum container 11; a target holder 13 located inside the vacuum container; a substrate holder 14 opposed to the target holder 13; a power source 15 for applying a voltage between the target holder 13 and the substrate holder 14; a magnetron-sputtering magnet 12 provided behind the target holder 13, for generating a magnetic field having a component parallel to a target T; and radio-frequency antennae 16 for generating radio-frequency inductively-coupled plasma within a space in the vicinity of the target T where the magnetic field generated by the magnetron-sputtering magnet 12 has a strength equal to or higher than a predetermined level. The radio-frequency inductively-coupled plasma generated by the radio-frequency antennae 16 promotes the supply of electrons into the aforementioned magnetic field, so that the sputtering process can be performed at a high rate.
IPC 8 full level
C23C 14/34 (2006.01); C23C 14/35 (2006.01); H01J 37/32 (2006.01); H01J 37/34 (2006.01); H05H 1/46 (2006.01)
CPC (source: EP KR US)
C23C 14/3407 (2013.01 - EP KR US); C23C 14/358 (2013.01 - EP KR US); H01J 37/321 (2013.01 - EP KR US); H01J 37/3211 (2013.01 - EP KR US); H01J 37/3408 (2013.01 - EP KR US); H01J 37/3411 (2013.01 - EP KR US); H01J 37/3417 (2013.01 - EP KR US)
Citation (examination)
US 6197166 B1 20010306 - MOSLEHI MEHRDAD M [US]
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
DOCDB simple family (publication)
EP 2345750 A1 20110720; EP 2345750 A4 20131127; EP 2345750 B1 20190102; CN 102144044 A 20110803; CN 102144044 B 20151125; JP 5702143 B2 20150415; JP WO2010023878 A1 20120126; KR 20110065480 A 20110615; KR 20160087391 A 20160721; TW 201016873 A 20100501; TW I495743 B 20150811; US 2011203922 A1 20110825; US 8916034 B2 20141223; WO 2010023878 A1 20100304
DOCDB simple family (application)
EP 09809534 A 20090825; CN 200980133584 A 20090825; JP 2009004092 W 20090825; JP 2010526534 A 20090825; KR 20117007099 A 20090825; KR 20167017826 A 20090825; TW 98128935 A 20090828; US 200913059318 A 20090825