Global Patent Index - EP 2352582 A1

EP 2352582 A1 20110810 - SYSTEM FOR PRODUCING SILICON WITH IMPROVED RESOURCE UTILIZATION

Title (en)

SYSTEM FOR PRODUCING SILICON WITH IMPROVED RESOURCE UTILIZATION

Title (de)

ANLAGE ZUR HERSTELLUNG VON SILIZIUM MIT VERBESSERTER RESSOURCENNUTZUNG

Title (fr)

INSTALLATION DE PRODUCTION DE SILICIUM PERMETTANT UNE AMÉLIORATION DE L'EXPLOITATION DES RESSOURCES

Publication

EP 2352582 A1 20110810 (DE)

Application

EP 09756732 A 20091119

Priority

  • EP 2009065466 W 20091119
  • DE 102008059769 A 20081201
  • US 11882108 P 20081201

Abstract (en)

[origin: CA2745480A1] The present invention relates to a system for producing silicon, preferably high-purity silicon, particularly solar silicon, and to a method for producing silicon, preferably high-purity silicon, in particular solar silicon, in each case with particularly effective resource utilization and reduced emission of pollutants.

IPC 8 full level

B01J 19/24 (2006.01); C01B 33/025 (2006.01)

CPC (source: EP KR US)

B01J 6/00 (2013.01 - EP US); B01J 6/008 (2013.01 - EP US); B01J 19/0013 (2013.01 - EP US); B01J 19/24 (2013.01 - KR); C01B 3/22 (2013.01 - EP US); C01B 33/025 (2013.01 - EP KR US); B01J 2219/00006 (2013.01 - EP US); B01J 2219/00117 (2013.01 - EP US); C01B 2203/0272 (2013.01 - EP US); Y02P 20/129 (2015.11 - EP US)

Citation (search report)

See references of WO 2010063587A1

Citation (examination)

EP 2346600 A2 20110727 - EVONIK DEGUSSA GMBH [DE]

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR

DOCDB simple family (publication)

DE 102008059769 A1 20100602; AU 2009321665 A1 20100610; BR PI0922635 A2 20160105; CA 2745480 A1 20100610; CN 102232007 A 20111102; EA 201100878 A1 20120130; EP 2352582 A1 20110810; JP 2012510421 A 20120510; KR 20110106285 A 20110928; SG 171868 A1 20110728; TW 201031590 A 20100901; US 2011236291 A1 20110929; WO 2010063587 A1 20100610; ZA 201104039 B 20120229

DOCDB simple family (application)

DE 102008059769 A 20081201; AU 2009321665 A 20091119; BR PI0922635 A 20091119; CA 2745480 A 20091119; CN 200980148410 A 20091119; EA 201100878 A 20091119; EP 09756732 A 20091119; EP 2009065466 W 20091119; JP 2011538937 A 20091119; KR 20117012474 A 20091119; SG 2011039393 A 20091119; TW 98140346 A 20091126; US 200913132166 A 20091119; ZA 201104039 A 20110531