Global Patent Index - EP 2356700 A1

EP 2356700 A1 20110817 - METHOD FOR MACHINING THE SURFACE OF A WAFER FOR PRODUCING A SOLAR CELL, AND WAFER

Title (en)

METHOD FOR MACHINING THE SURFACE OF A WAFER FOR PRODUCING A SOLAR CELL, AND WAFER

Title (de)

VERFAHREN ZUR BEARBEITUNG DER OBERFLÄCHE EINES WAFERS ZUR HERSTELLUNG EINER SOLARZELLE UND WAFER

Title (fr)

PROCÉDÉ POUR USINER LA SURFACE D'UNE PLAQUETTE DESTINÉE À PRODUIRE UNE CELLULE PHOTOVOLTAÏQUE ET PLAQUETTE

Publication

EP 2356700 A1 20110817 (DE)

Application

EP 09765105 A 20091207

Priority

  • EP 2009066556 W 20091207
  • DE 102008063558 A 20081208

Abstract (en)

[origin: US2011232751A1] In a method for the treatment of the surface of a wafer for producing a solar cell, onto which wafer an antireflection and passivation layer has been applied onto a p-doped layer in a step preceding the method, the surface is treated in a processing step and then a subsequent metallization on the surface of the wafer for producing contacts for the solar cell takes place. This processing step is for passivation or for removal of the p-doped layer in the region of disturbances such as scratches, defect sites, pinholes and inhomogeneous regions in the antireflection and passivation layer. It is thus possible to avoid metal depositions at these disturbances.

IPC 8 full level

H01L 31/18 (2006.01)

CPC (source: EP KR US)

C25D 7/126 (2013.01 - EP US); H01L 31/02168 (2013.01 - EP US); H01L 31/022425 (2013.01 - EP US); H01L 31/04 (2013.01 - KR); H01L 31/18 (2013.01 - KR); H01L 31/186 (2013.01 - EP US); Y02E 10/50 (2013.01 - EP US); Y02P 70/50 (2015.11 - EP US)

Citation (search report)

See references of WO 2010066693A1

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR

DOCDB simple family (publication)

US 2011232751 A1 20110929; AU 2009326119 A1 20100617; CA 2744924 A1 20100617; CN 102246323 A 20111116; DE 102008063558 A1 20100610; EP 2356700 A1 20110817; IL 213422 A0 20110731; JP 2012511246 A 20120517; KR 20110101144 A 20110915; MX 2011006028 A 20110628; SG 171877 A1 20110728; TW 201029215 A 20100801; WO 2010066693 A1 20100617

DOCDB simple family (application)

US 201113154539 A 20110607; AU 2009326119 A 20091207; CA 2744924 A 20091207; CN 200980149116 A 20091207; DE 102008063558 A 20081208; EP 09765105 A 20091207; EP 2009066556 W 20091207; IL 21342211 A 20110606; JP 2011539050 A 20091207; KR 20117012904 A 20091207; MX 2011006028 A 20091207; SG 2011039591 A 20091207; TW 98141953 A 20091208