EP 2364380 A4 20120704 - HIGH RATE DEPOSITION OF THIN FILMS WITH IMPROVED BARRIER LAYER PROPERTIES
Title (en)
HIGH RATE DEPOSITION OF THIN FILMS WITH IMPROVED BARRIER LAYER PROPERTIES
Title (de)
SCHNELLE ABSCHEIDUNG VON DÜNNEN FILMEN MIT VERBESSERTEN BARRIERESCHICHTEIGENSCHAFTEN
Title (fr)
DÉPÔT HAUTE VITESSE DE COUCHES MINCES AVEC PROPRIÉTÉS AMÉLIORÉES DE COUCHE BARRIÈRE
Publication
Application
Priority
- US 2009067024 W 20091207
- US 12038108 P 20081205
- US 16128709 P 20090318
Abstract (en)
[origin: US2010143710A1] An atomic layer deposition (ALD) method is utilized to deposit a thin film barrier layer of a metal oxide, such as titanium dioxide, onto a substrate. Excellent barrier layer properties can be achieved when the titanium oxide barrier is deposited by ALD at temperatures below approximately 100° C. Barriers less than 100 angstroms thick and having a water vapor transmission rate of less than approximately 0.01 grams/m2/day are disclosed, as are methods of manufacturing such barriers.
IPC 8 full level
C23C 16/40 (2006.01); C23C 16/00 (2006.01); H01L 21/205 (2006.01)
CPC (source: EP KR US)
C23C 16/40 (2013.01 - KR); C23C 16/405 (2013.01 - EP US); C23C 16/448 (2013.01 - KR); C23C 16/45551 (2013.01 - EP US); C23C 16/545 (2013.01 - EP US); H01L 21/0262 (2013.01 - KR); Y10T 428/265 (2015.01 - EP US)
Citation (search report)
- [XY] US 2008018244 A1 20080124 - ANANDAN MUNISAMY [US]
- [X] US 2004197527 A1 20041007 - MAULA JARMO ILMARI [FI], et al
- [Y] US 2007224348 A1 20070927 - DICKEY ERIC R [US], et al
- [Y] WO 2005074330 A1 20050811 - AGENCY SCIENCE TECH & RES [SG], et al
- See references of WO 2010065966A2
Citation (examination)
- US 2008119098 A1 20080522 - PALLEY IGOR [US], et al
- US 2007281105 A1 20071206 - MOKHLESI NIMA [US], et al
- JOHN FAHLTEICH ET AL: "Permeation barrier properties of thin oxide films on flexible polymer substrates", 21 November 2008 (2008-11-21), pages 3075 - 3080, XP055072843
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
DOCDB simple family (publication)
US 2010143710 A1 20100610; BR PI0922795 A2 20180529; CN 102239278 A 20111109; EP 2364380 A2 20110914; EP 2364380 A4 20120704; JP 2012511106 A 20120517; KR 20110100618 A 20110914; WO 2010065966 A2 20100610; WO 2010065966 A3 20101014
DOCDB simple family (application)
US 63274909 A 20091207; BR PI0922795 A 20091207; CN 200980148629 A 20091207; EP 09831274 A 20091207; JP 2011539778 A 20091207; KR 20117012495 A 20091207; US 2009067024 W 20091207