EP 2374132 A1 20111012 - MULTIBIT MULTIFERROIC MEMORY ELEMENT
Title (en)
MULTIBIT MULTIFERROIC MEMORY ELEMENT
Title (de)
MEHRBIT-MULTIFERROIC-SPEICHERELEMENT
Title (fr)
ÉLÉMENT DE MÉMOIRE MULTIFERROÏQUE MULTIBITS
Publication
Application
Priority
- IB 2009055875 W 20091221
- EP 08172722 A 20081223
- EP 09799177 A 20091221
Abstract (en)
[origin: WO2010073211A1] A memory element (1) comprises a source electrode (12), a drain electrode (13) and a gate, wherein a memory state of the memory element is switchable by application of a voltage signal to the gate, and is readable by measuring a current-voltage characteristic between the source electrode and the drain electrode across a channel region (21). The gate comprises a multiferroic material (15). A magnetic field may be generated in the channel region (21). According to the invention, the multiferroic material (15) comprises a first and a second stable domain (15.1; 15.2), wherein a switching state of the first domain is set by application of a first write voltage signal between a gate electrode and the source electrode, and a switching state of the second domain is set by application of a second write voltage signal between the gate electrode and the drain electrode, whereby the memory element is a 2-bit memory element.
IPC 8 full level
G11C 11/56 (2006.01); G11C 11/16 (2006.01); G11C 11/22 (2006.01)
CPC (source: EP)
G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/5607 (2013.01); G11C 11/5657 (2013.01)
Citation (search report)
See references of WO 2010073211A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
DOCDB simple family (publication)
WO 2010073211 A1 20100701; CN 102246237 A 20111116; CN 102246237 B 20140521; EP 2374132 A1 20111012; TW 201027715 A 20100716
DOCDB simple family (application)
IB 2009055875 W 20091221; CN 200980149958 A 20091221; EP 09799177 A 20091221; TW 98135470 A 20091020