Global Patent Index - EP 2375457 A2

EP 2375457 A2 20111012 - Light emitting device with a monolithic re-emission layer

Title (en)

Light emitting device with a monolithic re-emission layer

Title (de)

Lichtemittierende Vorrichtung mit monolithischer Re-Emissionsschicht

Title (fr)

Dispositif électroluminescent avec une couche monolithique de réémission

Publication

EP 2375457 A2 20111012 (EN)

Application

EP 11159083 A 20110321

Priority

KR 20100032558 A 20100409

Abstract (en)

A light emitting device includes a light emitting structure comprising a first conductivity type semiconductor layer (110), a second conductivity type semiconductor layer (130) and an active layer (120) disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer to emit a light of a first wavelength; and a re-emission layer (140) disposed on the light emitting structure, the re-emission layer comprising a nitride semiconductor, wherein the re-emission layer absorbs the light of the first wavelength range and the re-emission layer emits a light of a second wavelength range longer than the first wavelength range, and the re-emission layer is configured of multi layers having different indium (In) compositions, respectively, and the indium content in the multi-layer is largest in a top layer of the multi-layers.

IPC 8 full level

H01L 33/08 (2010.01); H01L 33/32 (2010.01); H01L 33/50 (2010.01)

CPC (source: EP US)

H01L 33/08 (2013.01 - EP US); H01L 33/32 (2013.01 - EP US); H01L 33/50 (2013.01 - EP US); H01L 2224/48091 (2013.01 - EP US)

C-Set (source: EP US)

H01L 2224/48091 + H01L 2924/00014

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

EP 2375457 A2 20111012; EP 2375457 A3 20150429; EP 2375457 B1 20180815; CN 102214760 A 20111012; CN 102214760 B 20150422; KR 101011757 B1 20110207; TW 201143134 A 20111201; TW I451598 B 20140901; US 2011249468 A1 20111013; US 8866374 B2 20141021

DOCDB simple family (application)

EP 11159083 A 20110321; CN 201110090411 A 20110408; KR 20100032558 A 20100409; TW 100110041 A 20110324; US 201113080706 A 20110406