EP 2380190 A2 20111026 - METHOD OF ENHANCING THE STRENGTH OF SEMICONDUCTOR WAFERS OR CHIPS
Title (en)
METHOD OF ENHANCING THE STRENGTH OF SEMICONDUCTOR WAFERS OR CHIPS
Title (de)
VERFAHREN ZUR VERSTÄRKUNG VON HALBLEITERWAFERN ODER CHIPS
Title (fr)
PROCÉDÉ POUR OPTIMISER LA RÉSISTANCE DE TRANCHES OU DE PUCES SEMI-CONDUCTRICES
Publication
Application
Priority
- EP 2010000328 W 20100120
- DE 102009005484 A 20090121
Abstract (en)
[origin: WO2010083995A2] The present invention relates to a method of enhancing the strength of a semiconductor wafer or semiconductor chip, the semiconductor wafers being sliced from an ingot or cut from a foil and preprocessed in one or several preprocessing steps prior to further processing steps for generating semiconductor elements. In the proposed method at least one annealing step is performed in addition to the one or several preprocessing steps and processing steps. With the proposed method the fracture strength of semiconductor wafers can be significantly enhanced thus allowing the use of semiconductor wafers with a higher degree of damages and increasing the yield of the whole wafer processing.
IPC 8 full level
H01L 21/302 (2006.01)
CPC (source: EP US)
H01L 21/0201 (2013.01 - EP); H01L 21/302 (2013.01 - EP); H01L 21/324 (2013.01 - EP US); H01L 31/18 (2013.01 - EP)
Citation (search report)
See references of WO 2010083995A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
DOCDB simple family (publication)
WO 2010083995 A2 20100729; WO 2010083995 A3 20100923; EP 2380190 A2 20111026
DOCDB simple family (application)
EP 2010000328 W 20100120; EP 10700719 A 20100120