EP 2381009 B8 20140219 - Seal configuration for a system for continuous deposition of a thin film layer on a substrate
Title (en)
Seal configuration for a system for continuous deposition of a thin film layer on a substrate
Title (de)
Dichtungskonfiguration für ein System zur kontinuierlichen Auftragung einer Dünnfilmschicht auf einem Substrat
Title (fr)
Configuration de joint pour système de dépôt continu de couche mince sur un substrat
Publication
Application
Priority
US 76531610 A 20100422
Abstract (en)
[origin: EP2381009A1] An apparatus (60) and associated method of operation is provided for vapor deposition of a sublimated source material, such as CdTe, as a thin film on discrete photovoltaic (PV) module substrates (14) that are conveyed in a continuous, non-stop manner through the apparatus. The apparatus includes a deposition head (62) configured for receipt and sublimation of the source material. The deposition head has a distribution plate (88) at a defined distance above a horizontal conveyance plane (117) of an upper surface of the substrates conveyed through a deposition area (112) within the apparatus. The sublimated source material moves through the distribution plate and deposits onto the upper surface of the substrates as they are conveyed through the deposition area. The substrates move into and out of the deposition area through entry (120) and exit slots (122) that are defined by transversely extending entrance and exit seals (96). The seals are disposed at a gap distance (113) above the upper surface of the substrates that is less than the distance or spacing between the upper surface of the substrates and the distribution plate. The seals have a ratio of longitudinal length (in the direction of conveyance of the substrates) to gap distance of from about 10:1 1 to about 100:1.
IPC 8 full level
C23C 14/06 (2006.01); C23C 14/24 (2006.01); C23C 14/56 (2006.01); H01L 31/18 (2006.01)
CPC (source: EP US)
C23C 14/0629 (2013.01 - EP US); C23C 14/24 (2013.01 - EP US); C23C 14/562 (2013.01 - EP US); H01L 31/1828 (2013.01 - EP US); H01L 31/1876 (2013.01 - US); Y02E 10/543 (2013.01 - EP US); Y02P 70/50 (2015.11 - EP US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
EP 2381009 A1 20111026; EP 2381009 B1 20131211; EP 2381009 B8 20140219; AU 2011201680 A1 20111110; CN 102234763 A 20111109; CN 102234763 B 20150708; US 2011263063 A1 20111027; US 2013122631 A1 20130516; US 8361229 B2 20130129; US 9331231 B2 20160503
DOCDB simple family (application)
EP 11163129 A 20110420; AU 2011201680 A 20110414; CN 201110112892 A 20110421; US 201313751852 A 20130128; US 76531610 A 20100422