EP 2384330 A1 20111109 - PROCESS FOR PREPARING BIS- AND TRIS(SILYLORGANO)AMINES
Title (en)
PROCESS FOR PREPARING BIS- AND TRIS(SILYLORGANO)AMINES
Title (de)
VERFAHREN ZUR HERSTELLUNG VON BIS- UND TRIS(SILYLORGANO)AMINEN
Title (fr)
PROCÉDÉ DE PRODUCTION DE BIS ET TRIS(SILYL-ORGANO)AMINES
Publication
Application
Priority
- EP 2010050576 W 20100119
- DE 102009000500 A 20090130
Abstract (en)
[origin: WO2010086254A1] The invention provides a process for preparing silylorganoamines of the general formula (1) R'3-nR1 nSi-R2-NR3-R4-SiR"3-mR5 m (1) by reacting (aminoorganyl)silanes of the general formula (2), H-NR3-R4-SiR"3-mR5 m (2) with (haloorganyl)silanes of the general formula (3) R'3-nR1 nSi-R2-X (3), where R', R'', R1, R2, R3, R4, R5, X, m and n are each defined as per claim 1, said reaction comprising the following steps: a) reacting the (haloorganyl)silane of the general formula (3) and the (aminoorganyl)silane of the general formula (2) at a temperature of 0 to 250°C to form, as well as the silylorganoamine of the general formula (1), the ammonium halide of the (aminoorganyl)silane of the general formula (2) as a by-product, b) adding a base (B), which results in complete or partial ester interchange, in which the (aminoorganyl)silane of the general formula (2) is released again and forms the halide of the base (B), the halide of the base (B) being liquid at temperatures of at most 200°C, and c) removing the liquid halide formed from the base (B).
IPC 8 full level
CPC (source: EP KR US)
C07F 7/081 (2013.01 - EP US); C07F 7/10 (2013.01 - KR); C07F 7/18 (2013.01 - KR); C07F 7/1804 (2013.01 - EP US)
Citation (search report)
See references of WO 2010086254A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
DOCDB simple family (publication)
DE 102009000500 A1 20100805; CN 102300869 A 20111228; EP 2384330 A1 20111109; JP 2012516296 A 20120719; KR 20110093933 A 20110818; US 2011282088 A1 20111117; WO 2010086254 A1 20100805
DOCDB simple family (application)
DE 102009000500 A 20090130; CN 201080006130 A 20100119; EP 10700566 A 20100119; EP 2010050576 W 20100119; JP 2011546776 A 20100119; KR 20117015521 A 20100119; US 201013142622 A 20100119