Title (en)

INSIDE REFORMING SUBSTRATE FOR EPITAXIAL GROWTH; CRYSTAL FILM FORMING ELEMENT, DEVICE, AND BULK SUBSTRATE PRODUCED USING THE SAME; AND METHOD FOR PRODUCING THE SAME

Title (de)

INNENREFORMIERUNGSSUBSTRAT FÜR EPITAXIALWACHSTUM, KRISTALLFILMBILDUNGSELEMENT, VORRICHTUNG UND DAMIT HERGESTELLTES BULKSUBSTRAT SOWIE VERFAHREN ZU DESSEN HERSTELLUNG

Title (fr)

SUBSTRAT DE REFORMAGE INTÉRIEUR POUR CROISSANCE ÉPITAXIALE, ÉLÉMENT DE FORMATION DE COUCHE DE CRISTAL, DISPOSITIF ET SUBSTRAT MASSIF PRODUIT À L'AIDE DE CE DERNIER, ET SON PROCÉDÉ DE PRODUCTION

Publication

EP 2388802 A4 20130306 (EN)

Application

EP 09838237 A 20091204

Priority

• JP 2009006633 W 20091204
• JP 2009006293 A 20090115

Abstract (en)

[origin: EP2388802A1] [Purpose] In the field of sapphire substrates used chiefly for epitaxial growth of nitride semiconductor layers, to provide a sapphire substrate of which the shape and/or amount of warping can be controlled efficiently and precisely and of which substrate warping that occurs during layer formation can be suppressed and substrate warping behavior can be minimized, to provide nitride semiconductor layer growth bodies, nitride semiconductor devices, and nitride semiconductor bulk substrates using such substrates, and to provide a method of manufacturing these products. [Means of Resolution] Reformed domain patterns are formed within a sapphire substrate and the warp shape and/or amount of warping of the sapphire substrate are controlled by means of multiphoton absorption by condensing and scanning a pulsed laser through a polished surface of the sapphire substrate. When nitride semiconductor layers are formed using sapphire substrates obtained by means of this invention, substrate warping during layer formation is suppressed and substrate warping behavior is minimized so that layer quality and uniformity are improved and the quality and yield of nitride semiconductor devices is increased.

IPC 8 full level

H01L 21/20 (2006.01); B23K 26/00 (2014.01); C23C 16/02 (2006.01); C30B 25/18 (2006.01); C30B 29/20 (2006.01); C30B 29/38 (2006.01); C30B 29/40 (2006.01); C30B 33/00 (2006.01); C30B 33/04 (2006.01); H01L 21/205 (2006.01)

CPC (source: EP KR US)

C30B 25/186 (2013.01 - EP KR US); C30B 29/20 (2013.01 - EP KR US); C30B 29/403 (2013.01 - EP KR US); C30B 33/04 (2013.01 - EP KR US); H01L 21/02293 (2013.01 - KR); H01L 21/0242 (2013.01 - KR); H01L 21/02458 (2013.01 - KR); H01L 21/0254 (2013.01 - KR); H01L 21/02686 (2013.01 - KR); H01L 21/0242 (2013.01 - EP US); H01L 21/02458 (2013.01 - EP US); H01L 21/0254 (2013.01 - EP US); H01L 21/02686 (2013.01 - EP US)

Citation (search report)

• [AD] JP 2006347776 A 20061228 - SUMITOMO METAL MINING CO
• [AD] HIRAMATSU ET AL: "Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy", JAPANESE JOURNAL OF APPLIED PHYSICS (JJAP), vol. 32 Part 1, no. 4, 15 April 1993 (1993-04-15), pages 1528 - 1533, XP002690344, DOI: 10.1143/JJAP.32.1528
• [AD] BELOUSOV ET AL.: "In situ metrology advances in MOCVD growth of GaN-based materials", JOURNAL OF CRYSTAL GROWTH, vol. 272, no. 1-4, 10 December 2004 (2004-12-10), pages 94 - 99, XP002690347, DOI: 10.1016/j.jcrysgro.2004.08.080
• See references of WO 2010082267A1

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR

DOCDB simple family (publication)

EP 2388802 A1 20111123; EP 2388802 A4 20130306; EP 2388802 B1 20150506; CN 102272891 A 20111207; CN 102272891 B 20150617; JP 2010165817 A 20100729; JP 5552627 B2 20140716; KR 101362859 B1 20140217; KR 20110129377 A 20111201; PL 2388802 T3 20160229; TW 201033413 A 20100916; TW I494476 B 20150801; US 2012018732 A1 20120126; WO 2010082267 A1 20100722

DOCDB simple family (application)

EP 09838237 A 20091204; CN 200980154399 A 20091204; JP 2009006293 A 20090115; JP 2009006633 W 20091204; KR 20117018146 A 20091204; PL 09838237 T 20091204; TW 98144132 A 20091222; US 200913144920 A 20091204