EP 2401773 A2 20120104 - LASER CRYSTALLISATION BY IRRADIATION
Title (en)
LASER CRYSTALLISATION BY IRRADIATION
Title (de)
LASERKRISTALLISATION DURCH BESTRAHLUNG
Title (fr)
CRISTALLISATION LASER PAR IRRADIATION
Publication
Application
Priority
- DE 2009050072 W 20091210
- DE 102009010841 A 20090227
Abstract (en)
[origin: WO2010097064A2] The invention relates to a method for restructuring a semiconductor layer (2) with a multiplicity of lasers (18, 20, 22) which are arranged next to one another and, by means of respectively assigned beam shaping optics (46, 48, 50), project on the semiconductor layer (2) laser lines (8, 10, 12) arranged next to one another, with marginal regions (15, 17) and inner overlapping regions (14, 16), wherein at least the overlapping regions (14, 16) are projected completely and on passive regions (14, 16) of the semiconductor layer (2) in which the semiconductor layer is removed in a following processing step, and relates to a laser system for carrying out the method.
IPC 8 full level
H01L 31/18 (2006.01); B23K 26/073 (2006.01); C30B 1/02 (2006.01); C30B 13/00 (2006.01); C30B 13/24 (2006.01); H01L 21/02 (2006.01); H01L 21/20 (2006.01); H01L 21/268 (2006.01); H01L 27/142 (2006.01)
CPC (source: EP)
B23K 26/0006 (2013.01); B23K 26/0604 (2013.01); C30B 1/023 (2013.01); C30B 29/06 (2013.01); H01L 21/02532 (2013.01); H01L 21/02678 (2013.01); H01L 21/02686 (2013.01); H01L 21/02691 (2013.01); H01L 21/268 (2013.01); H01L 31/1872 (2013.01); B23K 2103/56 (2018.07); Y02P 70/50 (2015.11)
Citation (search report)
See references of WO 2010097064A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
DOCDB simple family (publication)
DE 102009010841 A1 20100902; EP 2401773 A2 20120104; WO 2010097064 A2 20100902; WO 2010097064 A3 20101021
DOCDB simple family (application)
DE 102009010841 A 20090227; DE 2009050072 W 20091210; EP 09807437 A 20091210