EP 2404317 A4 20140611 - METHOD FOR RELEASING A THIN-FILM SUBSTRATE
Title (en)
METHOD FOR RELEASING A THIN-FILM SUBSTRATE
Title (de)
VERFAHREN ZUR ABLÖSUNG EINES DÜNNSCHICHTSUBSTRATS
Title (fr)
PROCÉDÉ DE FABRICATION D'UN SUBSTRAT À COUCHE MINCE
Publication
Application
Priority
- US 2010026570 W 20100308
- US 15822309 P 20090306
Abstract (en)
[origin: WO2010102306A1] The present disclosure relates to methods for selectively etching a porous semiconductor layer to separate a thin-film semiconductor substrate (TFSS) having planar or three-dimensional features from a corresponding semiconductor template. The method involves forming a conformal sacrificial porous semiconductor layer on a template. Next, a conformal thin film silicon substrate is formed on top of the porous silicon layer. The middle porous silicon layer is then selectively etched to separate the TFSS and semiconductor template. The disclosed advanced etching chemistries and etching methods achieve selective etching with minimal damage to the TFSS and template.
IPC 8 full level
H01L 21/4763 (2006.01); H01L 27/142 (2014.01); H01L 31/18 (2006.01)
CPC (source: EP)
H01L 21/30608 (2013.01); H01L 31/03529 (2013.01); H01L 31/1804 (2013.01); H01L 31/1896 (2013.01); Y02P 70/50 (2015.11)
Citation (search report)
- [XI] US 2008157283 A1 20080703 - MOSLEHI MEHRDAD [US]
- [X] US 6331208 B1 20011218 - NISHIDA SHOJI [JP], et al
- [A] US 2008210294 A1 20080904 - MOSLEHI MEHRDAD [US]
- See references of WO 2010102306A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
DOCDB simple family (publication)
WO 2010102306 A1 20100910; EP 2404317 A1 20120111; EP 2404317 A4 20140611
DOCDB simple family (application)
US 2010026570 W 20100308; EP 10749454 A 20100308