EP 2404326 A2 20120111 - METHOD FOR PRODUCING A THIN LAYER PHOTOVOLTAIC SYSTEM AND THIN LAYER PHOTOVOLTAIC SYSTEM
Title (en)
METHOD FOR PRODUCING A THIN LAYER PHOTOVOLTAIC SYSTEM AND THIN LAYER PHOTOVOLTAIC SYSTEM
Title (de)
VERFAHREN ZUR HERSTELLUNG EINES DÜNNSCHICHT-PHOTOVOLTAIK-SYSTEMS UND DÜNNSCHICHT-PHOTOVOLTAIK-SYSTEM
Title (fr)
PROCÉDÉ DE FABRICATION D'UN SYSTÈME PHOTOVOLTAÏQUE EN COUCHES MINCES ET SYSTÈME PHOTOVOLTAÏQUE EN COUCHES MINCES
Publication
Application
Priority
- EP 2010051406 W 20100205
- DE 102009007908 A 20090206
Abstract (en)
[origin: EP2216832A2] The method involves using a flat metal chalcogenide compound semiconductor layer as an absorber for sunlight and a metal layer applied to the metal chalcogenide compound semiconductor layer. The metal chalcogenide compound semiconductor layer and the metal layer form a Schottky contact at their contact surface. The metal chalcogenide compound semiconductor layer is manufactured by applying a dispersion containing nano-scale particles with a diameter of about 3 to 30 nanometer on a transparent substrate material.
IPC 8 full level
H01L 31/032 (2006.01); H01L 27/142 (2006.01); H01L 31/0392 (2006.01); H01L 31/048 (2006.01); H01L 31/07 (2012.01); H01L 31/18 (2006.01)
CPC (source: EP US)
B32B 17/10018 (2013.01 - EP US); B32B 17/10761 (2013.01 - EP US); B32B 17/10788 (2013.01 - EP US); H01L 31/0296 (2013.01 - EP US); H01L 31/032 (2013.01 - EP US); H01L 31/0392 (2013.01 - EP US); H01L 31/03925 (2013.01 - EP US); H01L 31/07 (2013.01 - EP US); H01L 31/1836 (2013.01 - EP US); B32B 2327/12 (2013.01 - EP US); H01L 21/02551 (2013.01 - EP US); H01L 21/02568 (2013.01 - EP US); H01L 21/02601 (2013.01 - EP US); H01L 21/02628 (2013.01 - EP US); Y02E 10/50 (2013.01 - EP US)
Citation (search report)
See references of WO 2010089364A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
DOCDB simple family (publication)
EP 2216832 A2 20100811; EP 2216832 A3 20110706; CN 101834231 A 20100915; DE 102009007908 A1 20100812; EP 2404326 A2 20120111; JP 2010183083 A 20100819; KR 101112980 B1 20120224; KR 20100090667 A 20100816; US 2010200047 A1 20100812; US 8389318 B2 20130305; WO 2010089364 A2 20100812; WO 2010089364 A3 20110804
DOCDB simple family (application)
EP 10152747 A 20100205; CN 201010174104 A 20100205; DE 102009007908 A 20090206; EP 10702684 A 20100205; EP 2010051406 W 20100205; JP 2010024495 A 20100205; KR 20100011540 A 20100208; US 70106110 A 20100205