Global Patent Index - EP 2408030 B1

EP 2408030 B1 20170927 - Light emitting diode

Title (en)

Light emitting diode

Title (de)

Leuchtdiode

Title (fr)

Diode électroluminescente

Publication

EP 2408030 B1 20170927 (EN)

Application

EP 11173499 A 20110711

Priority

KR 20100067114 A 20100712

Abstract (en)

[origin: EP2408030A2] A light emitting device may be provided that includes a conductive support member (110), a first conductive layer (120), a second conductive layer (130), an insulation layer (170) between the first conductive layer and the second conductive layer, and a light emitting structure that includes a second semiconductor layer (150) on the second conductive layer, a first semiconductor layer (140), and an active layer (160) between the first semiconductor layer and the second semiconductor layer. The first conductive layer includes at least one conductive via (120a) that passes through the second conductive layer, the second semiconductor layer and the active layer. A top surface of the at least one conductive via is provided into the first semiconductor layer. The insulation layer (170) may substantially surround a side wall of the conductive via. The first surface of the first semiconductor layer may include a first surface area, a second surface area and a recess having a bottom surface. The recess is aligned with the bottom surface of the first conductive layer, and the first surface of the first conductive layer is aligned with the first area of the first surface of the first semiconductor layer. The first surface of the first semiconductor layer and the recess may have a surface roughness.

IPC 8 full level

H01L 33/38 (2010.01); H01L 33/10 (2010.01); H01L 33/20 (2010.01); H01L 33/22 (2010.01); H01L 33/44 (2010.01)

CPC (source: EP KR US)

H01L 33/10 (2013.01 - EP KR US); H01L 33/22 (2013.01 - KR); H01L 33/382 (2013.01 - EP KR US); H01L 33/405 (2013.01 - KR); H01L 33/42 (2013.01 - KR); H01L 33/44 (2013.01 - KR); H01L 33/60 (2013.01 - US); H01L 33/62 (2013.01 - US); H01L 33/64 (2013.01 - US); H01L 33/20 (2013.01 - US); H01L 33/22 (2013.01 - EP US); H01L 33/44 (2013.01 - EP US); H01L 2224/48091 (2013.01 - EP KR US); H01L 2224/48247 (2013.01 - EP KR US); H01L 2933/0016 (2013.01 - EP KR US)

Citation (examination)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

EP 2408030 A2 20120118; EP 2408030 A3 20141001; EP 2408030 B1 20170927; CN 102332512 A 20120125; CN 102332512 B 20160504; KR 101761385 B1 20170804; KR 20120006409 A 20120118; US 2012007118 A1 20120112; US 2014117399 A1 20140501; US 2014117400 A1 20140501; US 8643042 B2 20140204; US 8866178 B2 20141021; US 9117986 B2 20150825

DOCDB simple family (application)

EP 11173499 A 20110711; CN 201110201150 A 20110712; KR 20100067114 A 20100712; US 201113178975 A 20110708; US 201414150318 A 20140108; US 201414150373 A 20140108