EP 2412006 A1 20120201 - EPITAXIAL METHODS AND STRUCTURES FOR FORMING SEMICONDUCTOR MATERIALS
Title (en)
EPITAXIAL METHODS AND STRUCTURES FOR FORMING SEMICONDUCTOR MATERIALS
Title (de)
EPITAXIALVERFAHREN UND STRUKTUREN ZUR BILDUNG VON HALBLEITERMATERIALIEN
Title (fr)
PROCÉDÉS D'ÉPITAXIE ET STRUCTURES ÉPITAXIALES POUR FORMER DES MATÉRIAUX SEMI-CONDUCTEURS
Publication
Application
Priority
IB 2009000228 W 20090205
Abstract (en)
[origin: WO2010089623A1] Methods and structures for producing semiconductor materials, substrates and devices with improved characteristics are disclosed. Structures and methods for forming reduced strain structures include forming a plurality of substantially strain relaxed island structures and utilizing such island structures for subsequent further growth of strain relaxed substantial continuous layers of semiconductor material.
IPC 8 full level
H01L 21/205 (2006.01)
CPC (source: EP KR)
C30B 25/18 (2013.01 - EP); C30B 29/403 (2013.01 - EP); C30B 29/406 (2013.01 - EP); H01L 21/0242 (2013.01 - EP); H01L 21/02458 (2013.01 - EP); H01L 21/02502 (2013.01 - EP); H01L 21/0254 (2013.01 - EP); H01L 21/02639 (2013.01 - EP); H01L 21/02647 (2013.01 - EP); H01L 21/0265 (2013.01 - EP); H01L 21/20 (2013.01 - KR)
Citation (search report)
See references of WO 2010089623A1
Citation (examination)
WO 2009015350 A1 20090129 - SOITEC SILICON ON INSULATOR [FR], et al
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2010089623 A1 20100812; CN 102308369 A 20120104; EP 2412006 A1 20120201; JP 2012517114 A 20120726; KR 20110102501 A 20110916; SG 173524 A1 20110929
DOCDB simple family (application)
IB 2009000228 W 20090205; CN 200980156217 A 20090205; EP 09785805 A 20090105; JP 2011548791 A 20090205; KR 20117018170 A 20090205; SG 2011055969 A 20090205