EP 2413122 A1 20120201 - High-temperature capacitive static/dynamic pressure sensors and methods of making the same
Title (en)
High-temperature capacitive static/dynamic pressure sensors and methods of making the same
Title (de)
Kapazitive, statische/dynamische Hochtemperatur-Drucksensoren und Herstellungsverfahren dafür
Title (fr)
Capteurs à pression dynamique/statique capacitive à haute température et leurs procédés de fabrication
Publication
Application
Priority
US 80487410 A 20100730
Abstract (en)
Disclosed are capacitive pressure probes or sensors for high temperature applications. The capacitive pressure sensors of the present invention include, inter alia, a sapphire diaphragm which is disposed within an interior sensing chamber of the probe housing and has a first electrode formed on a central portion thereof. The central portion of the diaphragm and the first electrode are adapted and configured to deflect in response to pressure variations encountered within an interior sensing chamber and by the pressure sensor. A sapphire substrate which has a second electrode formed thereon is fused to the Sapphire diaphragm about its periphery to form a sapphire stack and to define a reference chamber therebetween. Prior to fusing the sapphire diaphragm to the sapphire substrate, all contact surfaces are chemically treated and prepared using plasma activation, so as to create a bonding layer and to reduce the temperature required for the fusion.
IPC 8 full level
G01L 9/00 (2006.01); C30B 29/20 (2006.01); G01L 19/04 (2006.01); H01L 21/762 (2006.01)
CPC (source: EP US)
G01L 9/0075 (2013.01 - EP US); G01L 19/04 (2013.01 - EP US); Y10T 29/49002 (2015.01 - EP US)
Citation (applicant)
- US 6148674 A 20001121 - PARK KYONG M [US], et al
- US 5955771 A 19990921 - KURTZ ANTHONY D [US], et al
Citation (search report)
- [XI] US 2010146771 A1 20100617 - BERTSCH DIETMAR [AT], et al
- [XI] EP 1329960 A1 20030723 - YAMATAKE CORP [JP]
- [XI] WO 9627123 A1 19960906 - ROSEMOUNT INC [US]
- [XI] US 2009158853 A1 20090625 - BERNER WALTER CHRISTIAN [CH], et al
- [A] EP 1998368 A2 20081203 - SHINETSU CHEMICAL CO [JP]
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
EP 2413122 A1 20120201; CA 2747472 A1 20120130; JP 2012032397 A 20120216; US 2012024073 A1 20120202; US 8141429 B2 20120327
DOCDB simple family (application)
EP 11250644 A 20110711; CA 2747472 A 20110728; JP 2011158751 A 20110720; US 80487410 A 20100730