EP 2430659 A1 20120321 - BUILT-IN VERY HIGH SENSITIVITY IMAGE SENSOR
Title (en)
BUILT-IN VERY HIGH SENSITIVITY IMAGE SENSOR
Title (de)
INTEGRIERTER HOCHSENSIBLER BILDSENSOR
Title (fr)
CAPTEUR D'IMAGE INTEGRE A TRES GRANDE SENSIBILITE
Publication
Application
Priority
- FR 2010050919 W 20100511
- FR 0953192 A 20090514
Abstract (en)
[origin: WO2010130950A1] The invention relates to a basic device for an image sensor, including a photodiode consisting of a doped area having a first type of conductivity (32) and formed at the surface of a semiconductor substrate having a second type of conductivity (30), adapted to be biased at a first reference voltage (Vref1), wherein the photodiode is combined with a device for the transfer (36), multiplication (38, 40, 42) and insulation (44) of charges, the photodiode being a fully depleted one and including, at the surface of the doped area having a first type of conductivity, a strongly doped region having the second type of conductivity (34) and adapted to be biased at a second reference voltage (Vref2).
IPC 8 full level
H01L 27/146 (2006.01); H01L 27/148 (2006.01)
CPC (source: EP US)
H01L 27/14609 (2013.01 - EP US); H01L 27/14818 (2013.01 - EP US); H01L 27/14843 (2013.01 - EP US)
Citation (search report)
See references of WO 2010130950A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
DOCDB simple family (publication)
WO 2010130950 A1 20101118; EP 2430659 A1 20120321; FR 2945667 A1 20101119; FR 2945667 B1 20111216; JP 2012527106 A 20121101; US 2012119264 A1 20120517
DOCDB simple family (application)
FR 2010050919 W 20100511; EP 10731767 A 20100511; FR 0953192 A 20090514; JP 2012510344 A 20100511; US 201013319782 A 20100511