EP 2431330 B1 20190227 - COMPOSITION FOR FORMING DOPED OR NON-DOPED ZINC OXIDE THIN FILM, AND METHOD FOR PRODUCING ZINC OXIDE THIN FILM USING SAME
Title (en)
COMPOSITION FOR FORMING DOPED OR NON-DOPED ZINC OXIDE THIN FILM, AND METHOD FOR PRODUCING ZINC OXIDE THIN FILM USING SAME
Title (de)
ZUSAMMENSETZUNG ZUM FORMEN DOTIERTER ODER NICHTDOTIERTER ZINKOXID-DÜNNSCHICHTEN SOWIE VERFAHREN ZUR HERSTELLUNG VON ZINKOXID-DÜNNSCHICHTEN DAMIT
Title (fr)
COMPOSITION POUR FORMER UN FILM MINCE D'OXYDE DE ZINC DOPÉ OU NON DOPÉ, ET PROCÉDÉ DE PRODUCTION D'UN FILM MINCE D'OXYDE DE ZINC L'UTILISANT
Publication
Application
Priority
- JP 2010057071 W 20100421
- JP 2009102544 A 20090421
- JP 2009197052 A 20090827
- JP 2010030914 A 20100216
Abstract (en)
[origin: EP2431330A1] Disclosed is a composition for forming a zinc oxide thin film, which contains an organic zinc compound as a starting material, is not ignitable, and can be easily handled. The composition for forming a zinc oxide thin film is capable of forming a transparent zinc oxide thin film which is not doped or doped with a group 3B element by being heated at 300 °C or less. Also disclosed is a method for obtaining a transparent zinc oxide thin film, which is not doped or doped with a group 3B element, using the composition. Specifically, the composition for forming a zinc oxide thin film contains a product which is obtained by partially hydrolyzing an organic zinc compound by adding water to the organic zinc compound or a solution of the organic zinc compound and a group 3B element compound. In cases when a group 3B element compound is contained, the molar ratio of the group 3B element compound to the organic zinc compound is within the range of 0.005-0.3. The composition is applied to a substrate surface and then heated, thereby forming a zinc oxide thin film which is doped with the group 3B element.
IPC 8 full level
C01G 9/02 (2006.01); H01B 13/00 (2006.01); H01L 31/18 (2006.01)
CPC (source: EP KR US)
C01G 9/02 (2013.01 - EP KR US); C09D 1/00 (2013.01 - EP); C23C 18/1216 (2013.01 - EP US); H01L 31/1884 (2013.01 - EP US); C01P 2002/50 (2013.01 - EP US); C01P 2002/52 (2013.01 - EP US); C01P 2002/72 (2013.01 - EP US); C01P 2002/86 (2013.01 - EP US); C01P 2006/40 (2013.01 - EP US); C01P 2006/42 (2013.01 - EP US); C01P 2006/60 (2013.01 - US); Y02E 10/50 (2013.01 - US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
DOCDB simple family (publication)
EP 2431330 A1 20120321; EP 2431330 A4 20121121; EP 2431330 B1 20190227; CN 102482113 A 20120530; CN 102482113 B 20150826; KR 101743308 B1 20170602; KR 20120022989 A 20120312; US 2012094019 A1 20120419; US 9096441 B2 20150804; WO 2010123030 A1 20101028
DOCDB simple family (application)
EP 10767087 A 20100421; CN 201080027443 A 20100421; JP 2010057071 W 20100421; KR 20117027593 A 20100421; US 201013265544 A 20100421