Global Patent Index - EP 2461882 A1

EP 2461882 A1 20120613 - SYSTEM AND PROCESS FOR PRODUCING MONOSILANE

Title (en)

SYSTEM AND PROCESS FOR PRODUCING MONOSILANE

Title (de)

ANLAGE UND VERFAHREN ZUR HERSTELLUNG VON MONOSILAN

Title (fr)

SYSTÈME ET PROCÉDÉ DE PRODUCTION DE MONOSILANE

Publication

EP 2461882 A1 20120613 (DE)

Application

EP 10737918 A 20100802

Priority

  • DE 102009037154 A 20090804
  • EP 2010061199 W 20100802

Abstract (en)

[origin: CA2769192A1] A description is given of a system and a process for producing monosilane (SiH4) by catalytic disproportionation of trichlorosilane (SiHCl3). The trichlorosilane is reacted in a reaction column (100) in the presence of a catalyst and subsequently purified in a rectification column (109). Between a reactive/distillation reaction zone (104; 105) in the reaction column (100) and the rectification column (109), one or more condensers (103) are arranged in which monosilane-containing reaction product from the reaction column (100) is partly condensed. However, this concerns solely condensers which are operated at a temperature above -40°C.

IPC 8 full level

B01D 3/00 (2006.01); C01B 33/04 (2006.01)

CPC (source: EP KR US)

B01D 3/00 (2013.01 - KR); B01D 3/009 (2013.01 - EP US); C01B 33/04 (2013.01 - KR); C01B 33/043 (2013.01 - EP US); Y02P 20/10 (2015.11 - EP US)

Citation (search report)

See references of WO 2011015548A1

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR

DOCDB simple family (publication)

DE 102009037154 B3 20101209; CA 2769192 A1 20110210; CN 102548628 A 20120704; EP 2461882 A1 20120613; JP 2013500927 A 20130110; JP 5722890 B2 20150527; KR 20120068848 A 20120627; RU 2012106749 A 20130910; TW 201109277 A 20110316; TW I510433 B 20151201; US 2012183465 A1 20120719; WO 2011015548 A1 20110210

DOCDB simple family (application)

DE 102009037154 A 20090804; CA 2769192 A 20100802; CN 201080035278 A 20100802; EP 10737918 A 20100802; EP 2010061199 W 20100802; JP 2012523306 A 20100802; KR 20127005475 A 20100802; RU 2012106749 A 20100802; TW 99125978 A 20100804; US 201013388681 A 20100802