EP 2462618 A1 20120613 - FIELD EFFECT TRANSISTOR WITH INTEGRATED TJBS DIODE
Title (en)
FIELD EFFECT TRANSISTOR WITH INTEGRATED TJBS DIODE
Title (de)
FELDEFFEKTTRANSISTOR MIT INTEGRIERTER TJBS-DIODE
Title (fr)
TRANSISTOR À EFFET DE CHAMP À DIODE TJBS INTÉGRÉE
Publication
Application
Priority
- DE 102009028240 A 20090805
- EP 2010058166 W 20100610
Abstract (en)
[origin: WO2011015397A1] A semiconductor component comprising at least one MOS field effect transistor and one diode is specified, wherein the diode is a trench junction barrier Schottky diode (TJBS) and the arrangement comprising MOS field effect transistor and trench junction barrier Schottky diode (TJBS) is configured as a monolithically integrated structure. The breakdown voltages of the MOS field effect transistor and of the trench junction barrier Schottky diode (TJBS) are in this case chosen in such a way that the MOS field effect transistor can be operated at breakdown.
IPC 8 full level
H01L 29/78 (2006.01)
CPC (source: EP US)
H01L 29/7806 (2013.01 - EP US); H01L 29/7813 (2013.01 - EP US); H01L 29/872 (2013.01 - EP US); H01L 29/8725 (2013.01 - EP US); H01L 21/223 (2013.01 - EP US); H01L 29/04 (2013.01 - EP US); H01L 29/0619 (2013.01 - EP US); H01L 29/1095 (2013.01 - EP US); H01L 29/41766 (2013.01 - EP US); H01L 29/66734 (2013.01 - EP US)
Citation (search report)
See references of WO 2011015397A1
Citation (examination)
US 6049108 A 20000411 - WILLIAMS RICHARD K [US], et al
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
DOCDB simple family (publication)
DE 102009028240 A1 20110210; CN 102473725 A 20120523; EP 2462618 A1 20120613; JP 2013501367 A 20130110; TW 201108394 A 20110301; US 2012187498 A1 20120726; WO 2011015397 A1 20110210
DOCDB simple family (application)
DE 102009028240 A 20090805; CN 201080034556 A 20100610; EP 10721527 A 20100610; EP 2010058166 W 20100610; JP 2012523255 A 20100610; TW 99125667 A 20100803; US 201013388738 A 20100610