EP 2467855 A4 20130821 - IN-SITU MEMORY ANNEALING
Title (en)
IN-SITU MEMORY ANNEALING
Title (de)
VORORT-SPEICHERAUFGLÜHUNG
Title (fr)
RECUIT DE MÉMOIRE IN SITU
Publication
Application
Priority
- US 24347909 P 20090917
- US 23596409 P 20090821
- US 2010040322 W 20100629
Abstract (en)
[origin: WO2011022123A1] In a system having a memory device, an event is detected during system operation. The memory device is heated to reverse use-incurred degradation of the memory device in response to detecting the event. Tn another system, the memory device is heated to reverse use incurred, degradation concurrently with execution of a data access operation within another memory device of the system. In another system having a memory controller coupled to first and second memory devices, data is evacuated from the first memory device to the second memory device in response to determining that a maintenance operation is needed within the first memory device.
IPC 8 full level
G11C 16/34 (2006.01); H01L 21/8239 (2006.01); H01L 27/115 (2006.01)
CPC (source: EP KR)
G06F 12/1009 (2013.01 - EP); G11C 7/04 (2013.01 - KR); G11C 16/16 (2013.01 - KR); G11C 16/34 (2013.01 - KR); G11C 16/3495 (2013.01 - EP); H10B 41/00 (2023.02 - EP); H10B 99/00 (2023.02 - EP); G06F 2212/1024 (2013.01 - EP); H10B 43/00 (2023.02 - EP)
Citation (search report)
- [XYI] US 2009125671 A1 20090514 - FLYNN DAVID [US], et al
- [XY] US 2006184718 A1 20060817 - SINCLAIR ALAN W [GB], et al
- See references of WO 2011022123A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
DOCDB simple family (publication)
WO 2011022123 A1 20110224; CN 102576569 A 20120711; EP 2467855 A1 20120627; EP 2467855 A4 20130821; JP 2013502647 A 20130124; KR 20120059569 A 20120608
DOCDB simple family (application)
US 2010040322 W 20100629; CN 201080042995 A 20100629; EP 10810328 A 20100629; JP 2012525570 A 20100629; KR 20127007342 A 20100629