EP 2467943 A4 20131218 - RADIO FREQUENCY POWER AMPLIFIER WITH LINEARIZING PREDISTORTER
Title (en)
RADIO FREQUENCY POWER AMPLIFIER WITH LINEARIZING PREDISTORTER
Title (de)
HOCHFREQUENZ-LEISTUNGSVERSTÄRKER MIT LINEARISIERUNGSVORVERZERRER
Title (fr)
AMPLIFICATEUR DE PUISSANCE RADIOFRÉQUENCE COMPRENANT UN COMPOSANT DE PRÉDISTORSION DE LINÉARISATION
Publication
Application
Priority
US 2009054023 W 20090817
Abstract (en)
[origin: WO2011021995A1] A power amplifier circuit includes an amplifier MOSFET and a predistorter MOSFET. The predistorter MOSFET source and drain are connected together, and the predistorter MOSFET is connected between the gate of the amplifier MOSFET and a second bias voltage signal. This biasing of the predistorter MOSFET causes it to provide a nonlinear capacitance at the gate of the amplifier MOSFET. The combined non-linear capacitances of the amplifier MOSFET and predistorter MOSFET provide predistortion that promotes cancellation of the distortion or nonlinearity contributed by the amplifier MOSFET alone.
IPC 8 full level
H04B 1/04 (2006.01); H03F 1/02 (2006.01); H03F 1/32 (2006.01); H03F 3/193 (2006.01); H03F 3/24 (2006.01)
CPC (source: EP KR)
H03F 1/0261 (2013.01 - EP); H03F 1/32 (2013.01 - KR); H03F 1/3205 (2013.01 - EP); H03F 1/3241 (2013.01 - EP); H03F 1/3276 (2013.01 - EP); H03F 3/04 (2013.01 - KR); H03F 3/082 (2013.01 - KR); H03F 3/189 (2013.01 - KR); H03F 3/19 (2013.01 - KR); H03F 3/193 (2013.01 - EP); H03F 3/245 (2013.01 - EP); H04B 1/04 (2013.01 - KR); H03F 2200/18 (2013.01 - EP); H03F 2200/408 (2013.01 - EP); H03F 2200/451 (2013.01 - EP); H04B 2001/0425 (2013.01 - EP)
Citation (search report)
- [X] US 2003193371 A1 20031016 - LARSON LARRY [US], et al
- [A] US 2007285162 A1 20071213 - VITZILAIOS GEORGIOS [GR], et al
- [A] US 7110718 B1 20060919 - SZCZESZYNSKI GREGORY KRZYSTOF [US], et al
- [A] US 2008136529 A1 20080612 - LIAO CHE-HUNG [TW], et al
- [A] US 2007052479 A1 20070308 - WANG CHIH W [TW]
- [A] CHENG-CHI YEN ET AL: "A 0.25-<maths><tex>$\mu$ </tex></maths>m 20-dBm 2.4-GHz CMOS Power Amplifier With an Integrated Diode Linearizer", IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, IEEE SERVICE CENTER, NEW YORK, NY, US, vol. 13, no. 2, 1 February 2003 (2003-02-01), XP011066963, ISSN: 1531-1309
- See references of WO 2011021995A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
DOCDB simple family (publication)
WO 2011021995 A1 20110224; CN 102577136 A 20120711; CN 102577136 B 20141105; EP 2467943 A1 20120627; EP 2467943 A4 20131218; HK 1173003 A1 20130503; KR 101719387 B1 20170323; KR 101766628 B1 20170808; KR 101814352 B1 20180104; KR 20120065350 A 20120620; KR 20170032485 A 20170322; KR 20170032486 A 20170322
DOCDB simple family (application)
US 2009054023 W 20090817; CN 200980161984 A 20090817; EP 09848548 A 20090817; HK 13100093 A 20130104; KR 20127006858 A 20090817; KR 20177007015 A 20090817; KR 20177007017 A 20090817