EP 2474048 A1 20120711 - OPTOELECTRONIC COMPONENT HAVING A SEMICONDUCTOR BODY, AN INSULATING LAYER, AND A PLANAR CONDUCTOR STRUCTURE, AND METHOD FOR THE PRODUCTION THEREOF
Title (en)
OPTOELECTRONIC COMPONENT HAVING A SEMICONDUCTOR BODY, AN INSULATING LAYER, AND A PLANAR CONDUCTOR STRUCTURE, AND METHOD FOR THE PRODUCTION THEREOF
Title (de)
OPTOELEKTRONISCHES BAUELEMENT MIT EINEM HALBLEITERKÖRPER, EINER ISOLATIONSSCHICHT UND EINER PLANAREN LEITSTRUKTUR UND VERFAHREN ZU DESSEN HERSTELLUNG
Title (fr)
COMPOSANT OPTOÉLECTRONIQUE PRÉSENTANT UN CORPS SEMI-CONDUCTEUR, UNE COUCHE ISOLANTE ET UNE STRUCTURE CONDUCTRICE PLANAIRE, ET PROCÉDÉ DE FABRICATION DUDIT COMPOSANT
Publication
Application
Priority
- DE 102009039890 A 20090903
- EP 2010061443 W 20100805
Abstract (en)
[origin: WO2011026709A1] The invention relates to an optoelectronic component (10) comprising at least one semiconductor body (2) having a radiation emission point (20). The point of the semiconductor body (2) opposite the radiation emission point (20) is disposed on a substrate (1), wherein at least one electrical connection region (22) is disposed on the radiation emission point (20). A metallization mound (3) is disposed on the electrical connection region (22). The semiconductor body (2) further at least partially has an insulating layer (4), wherein the metallization mound (3) protrudes past the insulating layer (4). At least one planar conductor structure (5) is disposed on the insulating layer (4) for planar contact with the semiconductor body (2), said structure being electrically conductively connected to the electrical connection region (22) by means of the metallization mound (3). The invention further relates to a method for producing such an optoelectronic component (10).
IPC 8 full level
H01L 33/00 (2010.01); H01L 33/44 (2010.01); H01L 33/62 (2010.01)
CPC (source: EP KR US)
H01L 24/24 (2013.01 - EP KR US); H01L 24/82 (2013.01 - EP KR US); H01L 33/005 (2013.01 - EP KR US); H01L 33/44 (2013.01 - EP KR US); H01L 33/62 (2013.01 - EP KR US); H01L 25/0753 (2013.01 - EP US); H01L 2224/24101 (2013.01 - EP KR US); H01L 2224/24105 (2013.01 - EP KR US); H01L 2224/24137 (2013.01 - EP KR US); H01L 2224/24226 (2013.01 - EP KR US); H01L 2224/24998 (2013.01 - EP KR US); H01L 2224/73267 (2013.01 - EP KR US); H01L 2924/01005 (2013.01 - EP US); H01L 2924/01006 (2013.01 - EP US); H01L 2924/01033 (2013.01 - EP US); H01L 2924/01075 (2013.01 - EP US); H01L 2924/01079 (2013.01 - EP US); H01L 2924/01082 (2013.01 - EP US); H01L 2924/014 (2013.01 - EP US); H01L 2924/12036 (2013.01 - EP US); H01L 2924/12041 (2013.01 - EP US); H01L 2924/12042 (2013.01 - EP US)
C-Set (source: EP US)
Citation (search report)
See references of WO 2011026709A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
DOCDB simple family (publication)
DE 102009039890 A1 20110310; CN 102484171 A 20120530; CN 102484171 B 20150114; EP 2474048 A1 20120711; JP 2013504187 A 20130204; JP 5675816 B2 20150225; KR 20120055723 A 20120531; TW 201123540 A 20110701; TW I451599 B 20140901; US 2012228663 A1 20120913; WO 2011026709 A1 20110310
DOCDB simple family (application)
DE 102009039890 A 20090903; CN 201080039409 A 20100805; EP 10742132 A 20100805; EP 2010061443 W 20100805; JP 2012527265 A 20100805; KR 20127008647 A 20100805; TW 99129447 A 20100901; US 201013394058 A 20100805