Global Patent Index - EP 2483923 A1

EP 2483923 A1 20120808 - OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR ADAPTING A CONTACT STRUCTURE FOR ELECTRICALLY CONTACTING AN OPTOELECTRONIC SEMICONDUCTOR CHIP

Title (en)

OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR ADAPTING A CONTACT STRUCTURE FOR ELECTRICALLY CONTACTING AN OPTOELECTRONIC SEMICONDUCTOR CHIP

Title (de)

OPTOELEKTRONISCHER HALBLEITERCHIP UND VERFAHREN ZUM ANPASSEN EINER KONTAKTSTRUKTUR ZUR ELEKTRISCHEN KONTAKTIERUNG EINES OPTOELEKTRONISCHEN HALBLEITERCHIPS

Title (fr)

PUCE À SEMI-CONDUCTEUR OPTOÉLECTRONIQUE ET PROCÉDÉ D'ADAPTATION D'UNE STRUCTURE DE CONTACT POUR LA MISE EN CONTACT ÉLECTRIQUE D'UNE PUCE À SEMI-CONDUCTEUR OPTOÉLECTRONIQUE

Publication

EP 2483923 A1 20120808 (DE)

Application

EP 10763590 A 20100910

Priority

  • DE 102009047889 A 20090930
  • DE 2010001077 W 20100910

Abstract (en)

[origin: WO2011038708A1] The invention relates to an optoelectronic semiconductor chip, comprising a first semiconductor functional area (21) having a first terminal (211) and a second terminal (212), and a contact structure (4) for electrically contacting the optoelectronic semiconductor chip, the contact structure being connected to the first semiconductor functional area (21) in an electrically conductive manner. The contact structure (4) has a conductor structure (41, 71, 42) that can be disconnected, wherein - when the conductor structure is not disconnected, an operating current path is established across the first terminal of the first semiconductor functional area and the second terminal, the operating current path being interrupted when the conductor structure is disconnected, or - when the conductor structure (41, 71, 42) is disconnected, an operating current path is established across the first terminal (211) of the first semiconductor functional area (21) and the second terminal (212), wherein when the conductor structure (41, 71, 42) is not disconnected, the conductor structure (41, 71, 42) connects the first terminal (211) to the second terminal (212) and short circuits the first semiconductor functional area (21).

IPC 8 full level

H01L 25/075 (2006.01); H01L 27/15 (2006.01); H01L 33/62 (2010.01)

CPC (source: EP KR US)

H01L 25/0753 (2013.01 - EP US); H01L 27/153 (2013.01 - EP US); H01L 33/62 (2013.01 - EP KR US); G01R 31/318516 (2013.01 - US); H01H 85/0417 (2013.01 - US); H01H 85/32 (2013.01 - US); H01L 23/5256 (2013.01 - US); H01L 27/156 (2013.01 - EP US); H01L 2224/73265 (2013.01 - US); H01L 2924/00 (2013.01 - US); H01L 2924/0002 (2013.01 - EP US); H02H 3/046 (2013.01 - US); H03K 17/74 (2013.01 - US); H03K 19/17728 (2013.01 - US); H05B 45/48 (2020.01 - US); H05B 45/58 (2020.01 - US); H10K 50/00 (2023.02 - US); Y10T 29/49204 (2015.01 - EP US)

Citation (search report)

See references of WO 2011038708A1

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR

DOCDB simple family (publication)

DE 102009047889 A1 20110331; CN 102549746 A 20120704; CN 102549746 B 20150819; EP 2483923 A1 20120808; JP 2013506305 A 20130221; KR 20120091132 A 20120817; TW 201117344 A 20110516; TW I475659 B 20150301; US 2012299049 A1 20121129; WO 2011038708 A1 20110407

DOCDB simple family (application)

DE 102009047889 A 20090930; CN 201080044052 A 20100910; DE 2010001077 W 20100910; EP 10763590 A 20100910; JP 2012531236 A 20100910; KR 20127010783 A 20100910; TW 99130842 A 20100913; US 201013497733 A 20100910