EP 2484815 A4 20130417 - SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
Title (en)
SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
Title (de)
SIC-EINKRISTALL UND VERFAHREN ZU SEINER HERSTELLUNG
Title (fr)
MONOCRISTAL SIC ET PROCÉDÉ DE FABRICATION DE CE DERNIER
Publication
Application
Priority
- JP 2009224291 A 20090929
- JP 2010065913 W 20100915
Abstract (en)
[origin: EP2484815A1] An object of the present invention is to obtain stable growth of SiC single crystals, particularly 4H-SiC single crystals with an effective crystal growth rate for a prolonged time even at a low temperature range of 2000°C or lower. A raw material containing Si, Ti and Ni is charged into a crucible 1 made of graphite and heat-melted to obtain a solvent. At the same time, C is dissolved out from the crucible 1 into the solvent to obtain a melt 6. A SiC seed crystal substrate 8 is then brought into contact with the melt 6 such that SiC is supersaturated in the melt 6 in the vicinity of the surface of the SiC seed crystal substrate 8, thereby allowing growth and production of an SiC single crystal on the SiC seed crystal substrate 8.
IPC 8 full level
C30B 29/36 (2006.01); C30B 9/10 (2006.01); C30B 17/00 (2006.01); C30B 19/04 (2006.01)
CPC (source: EP KR US)
C30B 9/10 (2013.01 - EP KR US); C30B 17/00 (2013.01 - EP KR US); C30B 29/36 (2013.01 - EP KR US)
Citation (search report)
- [X] EP 1895031 A1 20080305 - TOYOTA MOTOR CO LTD [JP]
- [AD] JP 2007261843 A 20071011 - SUMITOMO METAL IND
- [A] EP 1806437 A1 20070711 - SUMITOMO METAL IND [JP]
- [A] EP 1498518 A1 20050119 - SUMITOMO METAL IND [JP]
- [A] WO 2009090536 A1 20090723 - TOYOTA MOTOR CO LTD [JP], et al
- [A] YAKIMOVA R ET AL: "Growth of 4H-SiC from liquid phase", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. 46, no. 1-3, 1 April 1997 (1997-04-01), pages 329 - 332, XP004085338, ISSN: 0921-5107, DOI: 10.1016/S0921-5107(96)02001-6
- See references of WO 2011040240A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
DOCDB simple family (publication)
EP 2484815 A1 20120808; EP 2484815 A4 20130417; EP 2484815 B1 20141224; JP 5483216 B2 20140507; JP WO2011040240 A1 20130228; KR 101666596 B1 20161014; KR 20120091054 A 20120817; US 2012237428 A1 20120920; US 9856582 B2 20180102; WO 2011040240 A1 20110407
DOCDB simple family (application)
EP 10820359 A 20100915; JP 2010065913 W 20100915; JP 2011534186 A 20100915; KR 20127008748 A 20100915; US 201213428395 A 20120323