EP 2493214 A1 20120829 - SILICON CONDENSER MICROPHONE HAVING AN ADDITIONAL BACK CHAMBER AND A FABRICATION METHOD THEREFOR
Title (en)
SILICON CONDENSER MICROPHONE HAVING AN ADDITIONAL BACK CHAMBER AND A FABRICATION METHOD THEREFOR
Title (de)
SILICIUMKONDENSATORMIKROPHON MIT ZUSÄTZLICHER HINTERER KAMMER UND HERSTELLUNGSVERFAHREN DAFÜR
Title (fr)
MICROPHONE À CONDENSATEUR AU SILICIUM AYANT UNE CHAMBRE ARRIÈRE ADDITIONNELLE ET PROCÉDÉ DE FABRICATION ASSOCIÉ
Publication
Application
Priority
- KR 20090099222 A 20091019
- KR 2010000873 W 20100211
Abstract (en)
The present invention relates to a fabrication method of a silicon condenser microphone having an additional back chamber. The method of the present invention comprises: applying an adhesive to a substrate and then mounting a chamber casing; curing the adhesive used for adhering the chamber casing; applying an adhesive onto the chamber casing and then mounting a MEMS chip with a mounter; curing the adhesive used for adhering the MEMS chip; and joining the casing and the substrate mounted with components. As the back chamber formed by the chamber casing is added to the back chamber of the MEMS chip, an additional back chamber is provided. Therefore, the silicon condenser microphone fabricated according to the present invention can improve sensitivity by increasing the small back chamber space of the MEMS chip itself and reduce noise including THD (Total Harmonic Distortion).
IPC 8 full level
H04R 19/04 (2006.01); H04R 31/00 (2006.01)
CPC (source: EP KR US)
H04R 19/04 (2013.01 - EP KR US); H04R 31/00 (2013.01 - EP KR US); H01L 2924/16152 (2013.01 - EP US); H04R 2410/03 (2013.01 - EP US); H04R 2499/11 (2013.01 - EP US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
DOCDB simple family (publication)
WO 2011049276 A1 20110428; CN 102045632 A 20110504; CN 201910913 U 20110727; EP 2493214 A1 20120829; EP 2493214 A4 20170816; JP 2012517183 A 20120726; KR 101088400 B1 20111201; KR 20110042521 A 20110427; TW 201138486 A 20111101; US 2011266641 A1 20111103; US 8519492 B2 20130827
DOCDB simple family (application)
KR 2010000873 W 20100211; CN 201010517447 A 20101019; CN 201020577203 U 20101019; EP 10825101 A 20100211; JP 2011549080 A 20100211; KR 20090099222 A 20091019; TW 99135556 A 20101019; US 201013143585 A 20100211