EP 2507183 A1 20121010 - METHOD FOR STRUCTURING A SURFACE BY MEANS OF ION-BEAM ETCHING
Title (en)
METHOD FOR STRUCTURING A SURFACE BY MEANS OF ION-BEAM ETCHING
Title (de)
VERFAHREN ZUR STRUKTURIERUNG EINER OBERFLÄCHE MITTELS IONENSTRAHLENÄTZUNG
Title (fr)
PROCEDE DE STRUCTURATION DE SURFACE PAR ABRASION IONIQUE
Publication
Application
Priority
- FR 0905805 A 20091201
- FR 2010052507 W 20101124
Abstract (en)
[origin: WO2011067511A1] The invention relates to a method for structuring a surface, in other words, for forming at least one set of irregularities or patterns (2) having a submicronic height H and at least one characteristic lateral dimension W referred to as the micronic or submicronic width, on a surface of a material (1), in particular a glass, by means of ion-beam etching using an optionally neutralised ion beam, characterised in that said method comprises the following steps: providing said material with a thickness of at least 100 nm, the material being hybrid and solid and including a single or mixed oxide of element(s), the molar percentage of oxide in the material being at least 40%, in particular 40% to 94%, and at least one species, separate from the oxide element(s), in particular a metal, the molar percentage of species in the material ranging from 6% to 50% and being lower than the percentage of said oxide, with at least the majority of the species having a largest characteristic dimension smaller than 50 nm, said hybrid material in particular being metastable prior to said etching; optionally heating said hybrid material prior to said etching; and structuring the surface of said hybrid material with an etching time of less than one hour on an etching surface of more than 1 cm2 until said set of patterns is formed, the structuring step optionally including heating the hybrid material.
IPC 8 full level
C03C 14/00 (2006.01); C03C 15/00 (2006.01); C03C 21/00 (2006.01)
CPC (source: EP KR US)
C03C 14/00 (2013.01 - KR); C03C 14/004 (2013.01 - EP US); C03C 15/00 (2013.01 - EP KR US); C03C 21/00 (2013.01 - KR); C03C 21/005 (2013.01 - EP US); H01L 31/0236 (2013.01 - KR); C03C 2214/08 (2013.01 - EP US); C03C 2217/77 (2013.01 - EP US); Y10T 428/24355 (2015.01 - EP US)
Citation (search report)
See references of WO 2011067511A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
FR 2953213 A1 20110603; FR 2953213 B1 20130329; BR 112012013341 A2 20160301; CN 102712527 A 20121003; CN 102712527 B 20151007; EA 201290412 A1 20121228; EP 2507183 A1 20121010; JP 2013512178 A 20130411; JP 6050118 B2 20161221; KR 101874127 B1 20180703; KR 20120117997 A 20121025; US 2012288676 A1 20121115; US 9371250 B2 20160621; WO 2011067511 A1 20110609
DOCDB simple family (application)
FR 0905805 A 20091201; BR 112012013341 A 20101124; CN 201080062934 A 20101124; EA 201290412 A 20101124; EP 10799099 A 20101124; FR 2010052507 W 20101124; JP 2012541557 A 20101124; KR 20127016949 A 20101124; US 201013513117 A 20101124