EP 2513721 B1 20170927 - REFLECTIVE MASK FOR EUV LITHOGRAPHY
Title (en)
REFLECTIVE MASK FOR EUV LITHOGRAPHY
Title (de)
REFLEXIONSMASKE FÜR EUV-LITHOGRAFIE
Title (fr)
MASQUE RÉFLÉCHISSANT POUR LITHOGRAPHIE EUV
Publication
Application
Priority
- DE 102009054986 A 20091218
- US 30571710 P 20100218
- EP 2010070171 W 20101217
Abstract (en)
[origin: WO2011073441A2] To improve the mask of an EUV lithography apparatus in view of its high reflectivity, a reflective mask is suggested for EUV lithography, comprising a reflective multilayer system on a substrate configured for a working wavelength in the EUV range and having stacks with layers of at least two materials with different real parts of the refractive index at the working wavelength, wherein the multilayer system (V) is configured in such a manner that, as it is irradiated with EUV radiation at a fixed wavelength and an angle interval between the smallest and the largest angle of incidence of up to 21°, the apodization is less than 30%.
IPC 8 full level
B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); G03F 1/24 (2012.01); G03F 7/20 (2006.01)
CPC (source: EP KR US)
B82Y 10/00 (2013.01 - EP US); B82Y 40/00 (2013.01 - EP US); G03F 1/22 (2013.01 - KR); G03F 1/24 (2013.01 - EP KR US); G03F 7/20 (2013.01 - KR); G03F 7/70216 (2013.01 - EP US); G03F 7/70316 (2013.01 - EP US); H01L 21/027 (2013.01 - KR)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2011073441 A2 20110623; WO 2011073441 A3 20111006; CN 102770806 A 20121107; CN 102770806 B 20140716; DE 102009054986 A1 20110622; DE 102009054986 B4 20151112; EP 2513721 A2 20121024; EP 2513721 B1 20170927; JP 2013514651 A 20130425; JP 5926190 B2 20160525; KR 101714818 B1 20170309; KR 20120098886 A 20120905; US 2012320348 A1 20121220; US 8486590 B2 20130716
DOCDB simple family (application)
EP 2010070171 W 20101217; CN 201080064274 A 20101217; DE 102009054986 A 20091218; EP 10790791 A 20101217; JP 2012543808 A 20101217; KR 20127018680 A 20101217; US 201213526472 A 20120618