EP 2513971 A1 20121024 - METAL OXIDE FIELD EFFECT TRANSISTORS ON A MECHANICALLY FLEXIBLE POLYMER SUBSTRATE HAVING A DIELECTRIC THAT CAN BE PROCESSED FROM SOLUTION AT LOW TEMPERATURES
Title (en)
METAL OXIDE FIELD EFFECT TRANSISTORS ON A MECHANICALLY FLEXIBLE POLYMER SUBSTRATE HAVING A DIELECTRIC THAT CAN BE PROCESSED FROM SOLUTION AT LOW TEMPERATURES
Title (de)
METALLOXID-FELDEFFEKTTRANSISTOREN AUF MECHANISCH FLEXIBLEM POLYMERSUBSTRAT MIT AUS LÖSUNG PROZESSIERBAREM DIELEKTRIKUM BEI NIEDRIGEN TEMPERATUREN
Title (fr)
TRANSISTORS À EFFET DE CHAMP À GRILLE MÉTAL-OXYDE SUR SUBSTRAT POLYMÈRE FLEXIBLE MÉCANIQUE COMPORTANT UN DIÉLECTRIQUE POUVANT ÊTRE TRAITÉ À PARTIR D'UNE SOLUTION À BASSES TEMPÉRATURES
Publication
Application
Priority
- EP 09179923 A 20091218
- EP 2010068867 W 20101203
- EP 10785431 A 20101203
Abstract (en)
[origin: WO2011073044A1] The present invention relates to a method for producing an electronic component, in particular a field-effect transistor (FET), comprising at least one substrate, at least one dielectric, and at least one semiconducting metal oxide, wherein the dielectric or a precursor compound thereof based on organically modified silicon oxide compounds, in particular based on silsequioxanes and/or siloxanes, can be processed out of solution, and is thermally treated at a low temperature from room temperature to 350 °C, and the semiconductive metal oxide, in particular ZnO or a precursor compound thereof, can also be processed from solution at a low temperature from room temperature to 350 °C.
IPC 8 full level
H01L 29/49 (2006.01); H01L 29/786 (2006.01)
CPC (source: EP KR US)
H01L 21/02422 (2013.01 - EP US); H01L 21/02554 (2013.01 - EP US); H01L 21/02623 (2013.01 - KR); H01L 21/02628 (2013.01 - EP US); H01L 27/1225 (2013.01 - KR); H01L 29/4908 (2013.01 - EP KR US); H01L 29/66742 (2013.01 - KR); H01L 29/78603 (2013.01 - EP KR US); H01L 29/7869 (2013.01 - EP KR US); H01L 27/1292 (2013.01 - EP US)
Citation (search report)
See references of WO 2011073044A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2011073044 A1 20110623; CN 102668086 A 20120912; CN 102668086 B 20160106; EP 2513971 A1 20121024; JP 2013514643 A 20130425; KR 20120123343 A 20121108; TW 201144059 A 20111216; US 2012280228 A1 20121108; US 9263591 B2 20160216
DOCDB simple family (application)
EP 2010068867 W 20101203; CN 201080057432 A 20101203; EP 10785431 A 20101203; JP 2012543594 A 20101203; KR 20127018846 A 20101203; TW 99144621 A 20101217; US 201013515303 A 20101203