EP 2518784 A2 20121031 - Nitride semiconductor light emitting element and method of manufacturing the same
Title (en)
Nitride semiconductor light emitting element and method of manufacturing the same
Title (de)
Lichtemittierendes Nitridhalbleiter-Element und Herstellungsverfahren dafür
Title (fr)
Élément émetteur de lumière semi-conducteur au nitrure et son procédé de fabrication
Publication
Application
Priority
- JP 2011098851 A 20110427
- JP 2011110838 A 20110517
Abstract (en)
To provide a reliable nitride semiconductor light emitting element having a thick metal bump and a method of manufacturing the nitride semiconductor light emitting element with an improved productivity, the manufacturing method of a flip-chip nitride semiconductor light emitting element including: a nitride semiconductor light emitting element structure having an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, which are laminated on a substrate, and an n-side electrode connecting surface for connecting an n-side electrode to the n-type nitride semiconductor layer and a p-side electrode connecting surface for connecting a p-side electrode to the p-type nitride semiconductor layer on the same plane side of the substrate, the n-side electrode being connected to the n-side electrode connecting surface and the p-side electrode being connected to the p-side electrode connecting surface; and metal bumps formed on the n-side electrode and the p-side electrode, wherein a protective layer forming step, a first resist pattern forming step, a protective layer etching step, a first metal layer forming step, a second resist pattern forming step, a second metal layer forming step and a resist pattern removing step are sequentially performed.
IPC 8 full level
H01L 33/38 (2010.01); H01L 33/40 (2010.01); H01L 33/44 (2010.01)
CPC (source: EP KR US)
H01L 24/03 (2013.01 - US); H01L 24/04 (2013.01 - US); H01L 24/05 (2013.01 - US); H01L 24/06 (2013.01 - US); H01L 24/11 (2013.01 - US); H01L 24/13 (2013.01 - US); H01L 33/06 (2013.01 - US); H01L 33/20 (2013.01 - KR); H01L 33/32 (2013.01 - US); H01L 33/38 (2013.01 - EP KR US); H01L 33/382 (2013.01 - EP); H01L 33/405 (2013.01 - EP US); H01L 33/44 (2013.01 - KR); H01L 33/62 (2013.01 - KR US); H01L 33/44 (2013.01 - EP US); H01L 2224/0345 (2013.01 - US); H01L 2224/03472 (2013.01 - US); H01L 2224/0401 (2013.01 - US); H01L 2224/05564 (2013.01 - US); H01L 2224/05573 (2013.01 - US); H01L 2224/05624 (2013.01 - US); H01L 2224/05644 (2013.01 - US); H01L 2224/05647 (2013.01 - US); H01L 2224/05666 (2013.01 - US); H01L 2224/05669 (2013.01 - US); H01L 2224/06102 (2013.01 - US); H01L 2224/11462 (2013.01 - US); H01L 2224/13007 (2013.01 - US); H01L 2224/13144 (2013.01 - US); H01L 2224/13147 (2013.01 - US); H01L 2224/13155 (2013.01 - US); H01L 2933/0008 (2013.01 - KR); H01L 2933/0016 (2013.01 - EP US); H01L 2933/0066 (2013.01 - US)
Citation (applicant)
- JP 2004153110 A 20040527 - NICHIA KAGAKU KOGYO KK
- JP 2005079551 A 20050324 - TOYODA GOSEI KK
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
EP 2518784 A2 20121031; EP 2518784 A3 20151125; EP 2518784 B1 20180221; CN 102760814 A 20121031; CN 102760814 B 20170301; EP 3333909 A1 20180613; EP 3333909 B1 20191204; JP 2012238823 A 20121206; JP 5782823 B2 20150924; KR 101918772 B1 20181114; KR 20120121857 A 20121106; RU 2012117259 A 20131110; RU 2586452 C2 20160610; TW 201251119 A 20121216; TW I527266 B 20160321; US 10804450 B2 20201013; US 2012273823 A1 20121101; US 2016079505 A1 20160317; US 2017062686 A1 20170302; US 9231159 B2 20160105; US 9530950 B2 20161227
DOCDB simple family (application)
EP 12165914 A 20120427; CN 201210125497 A 20120425; EP 18150804 A 20120427; JP 2011110838 A 20110517; KR 20120043928 A 20120426; RU 2012117259 A 20120426; TW 101114910 A 20120426; US 201213457307 A 20120426; US 201514945215 A 20151118; US 201615350979 A 20161114