EP 2523216 B1 20191218 - MANUFACTURING METHOD FOR THIN FILM TRANSISTOR WITH POLYSILICON ACTIVE LAYER
Title (en)
MANUFACTURING METHOD FOR THIN FILM TRANSISTOR WITH POLYSILICON ACTIVE LAYER
Title (de)
HERSTELLUNGSVERFAHREN FÜR DÜNNSCHICHTTRANSISTOR MIT POLYSILICIUMAKTIVSCHICHT
Title (fr)
PROCÉDÉ DE FABRICATION DE TRANSISTOR À FILM MINCE À COUCHE ACTIVE DE POLYSILICIUM
Publication
Application
Priority
CN 201110124783 A 20110513
Abstract (en)
[origin: EP2523216A1] Embodiments of the disclosed technology relate to a method for manufacturing a thin film transistor (TFT) with a polysilicon active layer comprising: depositing an amorphous silicon layer on a substrate, and patterning the amorphous silicon layer so as to form an active layer comprising a source region, a drain region and a channel region; depositing an inducing metal layer on the source region and the drain region; performing a first thermal treatment on the active layer provided with the inducing metal layer so that the active layer is crystallized under the effect of the inducing metal; doping the source region and the drain region with a first impurity for collecting the inducing metal; and performing a second thermal treatment on the doped active layer so that the first impurity absorbs the inducing metal remained in the channel region.
IPC 8 full level
H01L 29/66 (2006.01); H01L 27/12 (2006.01)
CPC (source: EP KR US)
H01L 21/02672 (2013.01 - KR); H01L 21/3226 (2013.01 - KR); H01L 27/1277 (2013.01 - EP US); H01L 29/6675 (2013.01 - EP US); H01L 29/66757 (2013.01 - KR)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
EP 2523216 A1 20121114; EP 2523216 B1 20191218; CN 102709184 A 20121003; CN 102709184 B 20160817; JP 2012244173 A 20121210; KR 101498136 B1 20150303; KR 20120127318 A 20121121; US 2012289007 A1 20121115; US 9059214 B2 20150616
DOCDB simple family (application)
EP 12167749 A 20120511; CN 201110124783 A 20110513; JP 2012110601 A 20120514; KR 20120050435 A 20120511; US 201213469567 A 20120511