EP 2528117 A4 20130807 - GROUP III NITRIDE SEMICONDUCTOR ELEMENT
Title (en)
GROUP III NITRIDE SEMICONDUCTOR ELEMENT
Title (de)
GRUPPE-III-NITRID-HALBLEITERBAUELEMENT
Title (fr)
ÉLÉMENT À SEMI-CONDUCTEUR NITRURE D'ÉLÉMENT DU GROUPE III
Publication
Application
Priority
- JP 2010008232 A 20100118
- JP 2010066443 W 20100922
Abstract (en)
[origin: US2011175201A1] A Group III nitride semiconductor device has a semiconductor region, a metal electrode, and a transition layer. The semiconductor region has a surface comprised of a Group III nitride crystal. The semiconductor region is doped with a p-type dopant. The surface is one of a semipolar surface and a nonpolar surface. The metal electrode is provided on the surface. The transition layer is formed between the Group III nitride crystal of the semiconductor region and the metal electrode. The transition layer is made by interdiffusion of a metal of the metal electrode and a Group III nitride of the semiconductor region.
IPC 8 full level
H01L 21/28 (2006.01); H01L 29/45 (2006.01); H01L 33/14 (2010.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01)
CPC (source: EP KR US)
H01L 21/28575 (2013.01 - EP US); H01L 29/045 (2013.01 - EP US); H01L 29/452 (2013.01 - EP US); H01L 33/16 (2013.01 - KR); H01L 33/36 (2013.01 - KR); H01L 29/2003 (2013.01 - EP US); H01L 33/32 (2013.01 - EP US); H01L 33/40 (2013.01 - EP US)
Citation (search report)
- [I] US 2007093073 A1 20070426 - FARRELL ROBERT M JR [US], et al
- [A] SONG J O ET AL: "Ohmic-Contact Technology for GaN-Based Light-Emitting Diodes: Role of P-Type Contact", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ, US, vol. 57, no. 1, 23 December 2009 (2009-12-23), pages 42 - 59, XP011285599, ISSN: 0018-9383, DOI: 10.1109/TED.2009.2034506
- [A] MOCHIDA N ET AL: "Crystal orientation dependence of p-type contact resistance of GaN", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 189-190, 15 June 1998 (1998-06-15), pages 716 - 719, XP004148608, ISSN: 0022-0248, DOI: 10.1016/S0022-0248(98)00269-3
- [A] HITOSHI SATO ET AL: "High power and high efficiency green light emitting diode on free-standing semipolar (1122) bulk GaN substrate", PHYSICA STATUS SOLIDI. RAPID RESEARCH LETTERS, WILEY - V C H VERLAG, DE, vol. 1, no. 4, 1 July 2007 (2007-07-01), pages 162 - 164, XP002636795, ISSN: 1862-6254, [retrieved on 20070615], DOI: 10.1002/PSSR.200701098
- See references of WO 2011086730A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
DOCDB simple family (publication)
US 2011175201 A1 20110721; US 8415707 B2 20130409; CN 102422446 A 20120418; EP 2528117 A1 20121128; EP 2528117 A4 20130807; JP 2011146639 A 20110728; KR 20110099682 A 20110908; TW 201131805 A 20110916; WO 2011086730 A1 20110721
DOCDB simple family (application)
US 83497710 A 20100713; CN 201080020912 A 20100922; EP 10843086 A 20100922; JP 2010008232 A 20100118; JP 2010066443 W 20100922; KR 20117010827 A 20100922; TW 99134951 A 20101013