Global Patent Index - EP 2539916 A2

EP 2539916 A2 20130102 - HIGH-FREQUENCY SUPPLY OF A LOAD WITHOUT IMPEDANCE MATCHING

Title (en)

HIGH-FREQUENCY SUPPLY OF A LOAD WITHOUT IMPEDANCE MATCHING

Title (de)

HOCHFREQUENZVERSORGUNG EINER LAST OHNE IMPEDANZANPASSUNG

Title (fr)

ALIMENTATION HAUTE FRÉQUENCE D'UNE CHARGE SANS ADAPTATION D'IMPÉDANCE

Publication

EP 2539916 A2 20130102 (DE)

Application

EP 11703848 A 20110131

Priority

  • DE 102010008777 A 20100222
  • EP 2011051278 W 20110131

Abstract (en)

[origin: WO2011101226A2] An energy supplying device for a load (1) has a direct current source (2), a number of switching stages (3), and a control device (4). The switching stages (3) are connected to the direct current source (2), the load (1), and the control device (4) such that the load (1) can be connected to the direct current source (2) on the basis of a corresponding control of the switching stages (3) by the control device (4). Each of the switching stages (3) has a field effect transistor (5) and a number of freewheeling diodes (9, 9') that are connected in opposition to the respective field effect transistor (5) in parallel. The field effect transistors (5) have a threshold frequency (fG) to which said transistors can be maximally operated. Each freewheeling diode (9, 9') has a recovery time (T). For each switching stage (3), the recovery times (T) of all the freewheeling diodes (9, 9') that are connected in opposition to the respective field effect transistor (5) in parallel correspond at least approximately with the reciprocal value of the threshold frequency (fG) of the respective field effect transistor (5). The control device (4) controls the switching stages (3) at least intermittently such that power is reflected back into the switching stages (3) on the basis of a mismatch.

IPC 8 full level

H01J 37/32 (2006.01); H03F 3/217 (2006.01); H05H 1/46 (2006.01)

CPC (source: EP US)

H01J 37/32009 (2013.01 - EP US); H01J 37/32027 (2013.01 - EP US); H01J 37/32045 (2013.01 - EP US); H03F 3/2178 (2013.01 - EP US); H05H 1/46 (2013.01 - EP US); H02M 1/088 (2013.01 - US); H02M 3/1584 (2013.01 - US); H02M 11/00 (2013.01 - US)

Citation (search report)

See references of WO 2011101226A2

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

DE 102010008777 A1 20110825; CN 102763189 A 20121031; CN 102763189 B 20160113; EP 2539916 A2 20130102; JP 2013520952 A 20130606; JP 2014239061 A 20141218; JP 5931974 B2 20160608; RU 2012103489 A 20140327; RU 2594748 C2 20160820; US 2012313596 A1 20121213; US 9000738 B2 20150407; WO 2011101226 A2 20110825; WO 2011101226 A3 20120614

DOCDB simple family (application)

DE 102010008777 A 20100222; CN 201180010453 A 20110131; EP 11703848 A 20110131; EP 2011051278 W 20110131; JP 2012554260 A 20110131; JP 2014161099 A 20140807; RU 2012103489 A 20110131; US 201113580526 A 20110131