Global Patent Index - EP 2544306 B1

EP 2544306 B1 20180905 - ARTIFICIAL MICROSTRUCTURE AND ARTIFICIAL ELECTROMAGNETIC MATERIAL USING SAME

Title (en)

ARTIFICIAL MICROSTRUCTURE AND ARTIFICIAL ELECTROMAGNETIC MATERIAL USING SAME

Title (de)

KÜNSTLICHE MIKROSTRUKTUR UND KÜNSTLICHES ELEKTROMAGNETISCHES MATERIAL DAMIT

Title (fr)

MICROSTRUCTURE ARTIFICIELLE ET MATÉRIAU ÉLECTROMAGNÉTIQUE ARTIFICIEL UTILISANT CELLE-CI

Publication

EP 2544306 B1 20180905 (EN)

Application

EP 11859648 A 20111027

Priority

  • CN 201110061804 A 20110315
  • CN 201110108661 A 20110428
  • CN 201110108562 A 20110428
  • CN 201110111984 A 20110430
  • CN 201110145751 A 20110601
  • CN 201110145729 A 20110601
  • CN 2011081374 W 20111027

Abstract (en)

[origin: EP2544306A1] The present invention provides an artificial microstructure employed in an artificial electromagnetic material. The artificial microstructure includes a first segment, a second segment, and a third segment. The first segment is parallel to the second segment, and the third segment is connected between the first segment and the second segment. The artificial electromagnetic material has a special electromagnetic effect. The artificial electromagnetic material can be applied to various electromagnetic application systems instead of the typical electromagnetic material.

IPC 8 full level

H01Q 15/00 (2006.01); B81B 7/00 (2006.01); H01Q 15/02 (2006.01); H01Q 15/24 (2006.01)

CPC (source: EP US)

B81B 7/00 (2013.01 - US); H01Q 15/0086 (2013.01 - EP US); Y10T 428/249921 (2015.04 - EP US); Y10T 428/249922 (2015.04 - EP US)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

EP 2544306 A1 20130109; EP 2544306 A4 20140827; EP 2544306 B1 20180905; US 2013108856 A1 20130502; US 9041481 B2 20150526; WO 2012122804 A1 20120920

DOCDB simple family (application)

EP 11859648 A 20111027; CN 2011081374 W 20111027; US 201113583908 A 20111027