Global Patent Index - EP 2553136 B1

EP 2553136 B1 20161109 - Method for refilling an evaporation chamber

Title (en)

Method for refilling an evaporation chamber

Title (de)

VERFAHREN UND VORRICHTUNG ZUM NACHFÜLLEN EINER VERDAMPFERKAMMER

Title (fr)

Procédé de remplissage d'une chambre d'évaporateur

Publication

EP 2553136 B1 20161109 (DE)

Application

EP 11709945 A 20110323

Priority

  • EP 10157912 A 20100326
  • EP 2011054433 W 20110323
  • EP 11709945 A 20110323

Abstract (en)

[origin: EP2369033A1] The method for refilling an evaporator chamber (8), comprises transferring a material (1) containing selenium into a siphon within a heated vacuum chamber via a feeder (6) and a heated vacuum slide (2), heating the material in the siphon up to liquefaction, and transferring the material into a tank within the evaporator chamber via a funnel connected with an exit of the siphon. The heating of the heated vacuum slide takes place by a cooled connection piece (12) and/or a heated connection piece mounted on it. The heated vacuum slide is heated at 160-200[deg] C. The siphon is heated at 200-250[deg] C. The method for refilling an evaporator chamber (8), comprises transferring a material (1) containing selenium into a siphon within a heated vacuum chamber via a feeder (6) and a heated vacuum slide (2), heating the material in the siphon up to liquefaction, and transferring the material into a tank within the evaporator chamber via a funnel connected with an exit of the siphon. The heating of the heated vacuum slide takes place by a cooled connection piece (12) and/or a heated connection piece mounted on it. The heated vacuum slide is heated at 160-200[deg] C. The siphon is heated at 200-250[deg] C. The vacuum chamber is evacuated at a pressure of p 1of 10 3>mbar and the evaporation chamber is evacuated at a pressure of p 2of 10 -> 2>to 10 -> 7>mbar and is heated at a temperature of 230-270[deg] C, where p 1is greater than p 2. An independent claim is included for a device for discontinuously refilling an evaporator chamber.

IPC 8 full level

C23C 14/24 (2006.01); C23C 14/56 (2006.01)

CPC (source: EP KR US)

C23C 14/246 (2013.01 - EP KR US); C23C 14/56 (2013.01 - EP KR US); F17D 1/00 (2013.01 - US); F16L 53/30 (2017.12 - KR); F17D 1/00 (2013.01 - KR); Y10T 137/0318 (2015.04 - EP US); Y10T 137/6416 (2015.04 - EP US); Y10T 137/86083 (2015.04 - EP US)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

EP 2369033 A1 20110928; CN 102812151 A 20121205; EP 2553136 A1 20130206; EP 2553136 B1 20161109; ES 2614944 T3 20170602; JP 2013524001 A 20130617; KR 20130008024 A 20130121; US 2013098453 A1 20130425; US 2015020896 A1 20150122; WO 2011117291 A1 20110929

DOCDB simple family (application)

EP 10157912 A 20100326; CN 201180016279 A 20110323; EP 11709945 A 20110323; EP 2011054433 W 20110323; ES 11709945 T 20110323; JP 2013500492 A 20110323; KR 20127024316 A 20110323; US 201113576388 A 20110323; US 201414508802 A 20141007