EP 2561553 A2 20130227 - METHOD FOR PRODUCING A PHOTOVOLTAIC MODULE HAVING SEMICONDUCTOR CELLS CONNECTED ON THE BACK SIDE, AND PHOTOVOLTAIC MODULE
Title (en)
METHOD FOR PRODUCING A PHOTOVOLTAIC MODULE HAVING SEMICONDUCTOR CELLS CONNECTED ON THE BACK SIDE, AND PHOTOVOLTAIC MODULE
Title (de)
VERFAHREN ZUR HERSTELLUNG EINES PHOTOVOLTAIKMODULS MIT RÜCKSEITENKONTAKTIERTEN HALBLEITERZELLEN UND PHOTOVOLTAIK-MODUL
Title (fr)
PROCÉDÉ DE FABRICATION D'UN MODULE PHOTOVOLTAÏQUE POURVU DE CELLULES SEMI-CONDUCTRICES À CONTACT ARRIÈRE ET MODULE PHOTOVOLTAÏQUE
Publication
Application
Priority
- DE 102010027953 A 20100420
- EP 2011055951 W 20110414
Abstract (en)
[origin: WO2011131567A2] The invention relates to a method for producing a photovoltaic module comprising semiconductor cells (1) contacted on the back side and each having contact areas (3) provided on a contact side (2) for a photovoltaic module, characterized by the method steps of providing a non-conductive substrate (4) in the form of the film or the laminate and having a substrate coating (5) at least on one side and conductive at least in segments, applying an anisotropically conductive adhesive (6) to the substrate coating (5), placing the semiconductor cells (1) on the substrate coating having the adhesive, fixing each semiconductor cell by means of pressure and/or thermal effects for forming conductor paths (7) within the anisotropically conductive adhesive between the substrate coating and each contact side (2) of the semiconductor cell.
IPC 8 full level
H01L 31/048 (2006.01)
CPC (source: EP)
B32B 3/085 (2013.01); B32B 7/12 (2013.01); B32B 7/14 (2013.01); B32B 15/04 (2013.01); B32B 17/10018 (2013.01); B32B 17/10807 (2013.01); B32B 27/06 (2013.01); H01L 31/02008 (2013.01); H01L 31/022441 (2013.01); H01L 31/0481 (2013.01); H01L 31/0512 (2013.01); B32B 2255/10 (2013.01); B32B 2255/205 (2013.01); B32B 2307/202 (2013.01); B32B 2457/12 (2013.01); Y02E 10/50 (2013.01)
Citation (search report)
See references of WO 2011131567A2
Citation (examination)
- US 5951786 A 19990914 - GEE JAMES M [US], et al
- EP 2388828 A1 20111123 - SHARP KK [JP]
- US 6313396 B1 20011106 - GLENN GREGORY S [US]
- DE 102006009478 A1 20070830 - INFINEON TECHNOLOGIES AG [DE]
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2011131567 A2 20111027; WO 2011131567 A3 20120907; DE 102010027953 A1 20111201; EP 2561553 A2 20130227
DOCDB simple family (application)
EP 2011055951 W 20110414; DE 102010027953 A 20100420; EP 11714315 A 20110414