EP 2577750 A2 20130410 - LASER PROCESSING FOR HIGH-EFFICIENCY THIN CRYSTALLINE SILICON SOLAR CELL FABRICATION
Title (en)
LASER PROCESSING FOR HIGH-EFFICIENCY THIN CRYSTALLINE SILICON SOLAR CELL FABRICATION
Title (de)
LASERVERARBEITUNG ZUR HERSTELLUNG HOCHEFFIZIENTER DÜNNER SILICIUMKRISTALL-SOLARZELLEN
Title (fr)
TRAITEMENT LASER POUR FABRICATION DE CELLULES SOLAIRES EN SILICIUM CRISTALLIN MINCE À EFFICACITÉ ÉLEVÉE
Publication
Application
Priority
- US 201113057104 A 20110201
- US 34912010 P 20100527
- US 2011038444 W 20110527
Abstract (en)
[origin: WO2011150397A2] Laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.
IPC 8 full level
B23K 26/06 (2014.01); B23K 26/08 (2014.01); B23K 26/38 (2014.01); B23K 26/40 (2014.01); H01L 31/0224 (2006.01); H01L 31/0392 (2006.01); H01L 31/042 (2014.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01)
CPC (source: EP KR)
B23K 26/0624 (2015.10 - EP); B23K 26/08 (2013.01 - EP); B23K 26/389 (2015.10 - EP); B23K 26/40 (2013.01 - EP); H01L 31/0445 (2014.12 - KR); H01L 31/0682 (2013.01 - EP); H01L 31/18 (2013.01 - KR); H01L 31/182 (2013.01 - EP); B23K 2101/36 (2018.07 - EP); B23K 2103/172 (2018.07 - EP); B23K 2103/40 (2018.07 - EP); B23K 2103/50 (2018.07 - EP); Y02E 10/546 (2013.01 - EP); Y02E 10/547 (2013.01 - EP); Y02P 70/50 (2015.11 - EP)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2011150397 A2 20111201; WO 2011150397 A3 20120405; EP 2577750 A2 20130410; EP 2577750 A4 20140409; KR 101289787 B1 20130726; KR 20130027535 A 20130315
DOCDB simple family (application)
US 2011038444 W 20110527; EP 11787543 A 20110527; KR 20127033876 A 20110527