Global Patent Index - EP 2582770 A4

EP 2582770 A4 20140618 - ORGANIC ELECTRONIC DEVICES COMPRISING THE LAYER CONTAINING AT LEAST ONE METAL ORGANIC COMPOUND AND AT LEAST ONE METAL OXIDE

Title (en)

ORGANIC ELECTRONIC DEVICES COMPRISING THE LAYER CONTAINING AT LEAST ONE METAL ORGANIC COMPOUND AND AT LEAST ONE METAL OXIDE

Title (de)

ORGANISCHE ELEKTRONISCHE VORRICHTUNGEN MIT EINER SCHICHT AUS MINDESTENS EINER METALLOORGANISCHEN VERBINDUNG UND MINDESTENS EINEM METALLOXID

Title (fr)

DISPOSITIFS ÉLECTRONIQUES ORGANIQUES COMPRENANT UNE COUCHE QUI COMPREND AU MOINS UN COMPOSÉ ORGANIQUE MÉTALLIQUE ET AU MOINS UN OXYDE DE MÉTAL

Publication

EP 2582770 A4 20140618 (EN)

Application

EP 11795282 A 20110616

Priority

  • EP 10166551 A 20100618
  • IB 2011052625 W 20110616
  • EP 11795282 A 20110616

Abstract (en)

[origin: WO2011158204A1] The present invention relates to an organic electronic device including a first electrode, a second electrode and a first organic layer interposed between the first electrode and the second electrode, wherein the first organic layer comprises at least one metal organic compound and at least one metal oxide. The present invention further relates to an apparatus comprising the organic electronic device according to the present invention.

IPC 8 full level

C09K 11/06 (2006.01); H01L 51/50 (2006.01)

CPC (source: CN EP KR US)

C07F 15/0033 (2013.01 - CN); C09B 57/00 (2013.01 - EP KR); C09B 57/001 (2013.01 - EP KR); C09B 57/10 (2013.01 - EP KR); C09B 69/008 (2013.01 - EP KR); H05B 33/10 (2013.01 - EP); H05B 33/14 (2013.01 - EP); H10K 50/155 (2023.02 - CN); H10K 50/156 (2023.02 - CN EP); H10K 85/342 (2023.02 - CN EP KR US); H10K 50/155 (2023.02 - EP US); H10K 50/17 (2023.02 - CN EP KR); H10K 85/30 (2023.02 - EP); H10K 85/40 (2023.02 - EP); H10K 85/654 (2023.02 - EP); H10K 85/6572 (2023.02 - EP); H10K 85/6574 (2023.02 - EP); Y02E 10/549 (2013.01 - EP)

Citation (search report)

Citation (examination)

  • LEEM DONG-SEOK ET AL: "Highly efficient tandem p-i-n organic light-emitting diodes adopting a low temperature evaporated rhenium oxide interconnecting layer", APPLIED PHYSICS LETTERS, A I P PUBLISHING LLC, US, vol. 93, no. 10, 8 September 2008 (2008-09-08), pages 103304 - 103304, XP012111409, ISSN: 0003-6951, DOI: 10.1063/1.2979706
  • See also references of WO 2011158204A1

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

WO 2011158204 A1 20111222; CN 103068950 A 20130424; CN 103068950 B 20160824; CN 107698622 A 20180216; CN 107698622 B 20210629; EP 2582770 A1 20130424; EP 2582770 A4 20140618; JP 2013537701 A 20131003; JP 2016197744 A 20161124; JP 6014938 B2 20161026; JP 6408519 B2 20181017; KR 101806586 B1 20171207; KR 20130118858 A 20131030

DOCDB simple family (application)

IB 2011052625 W 20110616; CN 201180039004 A 20110616; CN 201610649460 A 20110616; EP 11795282 A 20110616; JP 2013514830 A 20110616; JP 2016139262 A 20160714; KR 20137001283 A 20110616