Global Patent Index - EP 2589068 A4

EP 2589068 A4 20140305 - SYSTEM AND METHOD OF SEMICONDUCTOR MANUFACTURING WITH ENERGY RECOVERY

Title (en)

SYSTEM AND METHOD OF SEMICONDUCTOR MANUFACTURING WITH ENERGY RECOVERY

Title (de)

SYSTEM UND VERFAHREN ZUR HALBLEITERHERSTELLUNG MIT ENERGIERÜCKGEWINNUNG

Title (fr)

SYSTÈME ET PROCÉDÉ DE FABRICATION DE SEMI-CONDUCTEUR AVEC RÉCUPÉRATION D'ÉNERGIE

Publication

EP 2589068 A4 20140305 (EN)

Application

EP 11804092 A 20110627

Priority

  • US 82644610 A 20100629
  • US 2011042038 W 20110627

Abstract (en)

[origin: US2011318909A1] The invention can provide or facilitate energy recovery operations during semiconductor processing operations by utilizing a bell jar having a radiation shield thereon that is comprised of a mediating layer comprising nickel disposed on an interior surface of the bell jar, and a reflective layer which can comprise a gold layer that is disposed on the mediating layer. The reflective layer has an emissivity of less than 5% and, more preferably, the reflective layer has an emissivity of less than about 1%. Heat from the reaction chamber can be used to reduce the heating load of one or more other unit operations.

IPC 8 full level

H01L 21/205 (2006.01); C23C 16/24 (2006.01); C23C 16/44 (2006.01); C23C 16/46 (2006.01)

CPC (source: EP KR US)

C01B 33/035 (2013.01 - EP KR US); C23C 16/24 (2013.01 - EP KR US); C23C 16/4411 (2013.01 - EP KR US); C23C 16/4418 (2013.01 - EP US); C23C 16/46 (2013.01 - EP KR US); H01L 21/0262 (2013.01 - KR); F28D 21/0001 (2013.01 - EP US); Y02P 20/10 (2015.11 - EP US); Y02P 20/129 (2015.11 - EP US)

Citation (search report)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

US 2011318909 A1 20111229; CN 103098172 A 20130508; CN 103098172 B 20160504; EP 2589068 A2 20130508; EP 2589068 A4 20140305; EP 2589068 B1 20160928; JP 2013533199 A 20130822; JP 5815695 B2 20151117; KR 20130038333 A 20130417; MY 166311 A 20180625; TW 201230150 A 20120716; WO 2012006029 A2 20120112; WO 2012006029 A3 20120405

DOCDB simple family (application)

US 82644610 A 20100629; CN 201180031981 A 20110627; EP 11804092 A 20110627; JP 2013518536 A 20110627; KR 20137001096 A 20110627; MY PI2012005684 A 20110627; TW 100122704 A 20110628; US 2011042038 W 20110627