EP 2593963 A1 20130522 - SEMICONDUCTOR COMPONENT, SUBSTRATE AND METHOD FOR PRODUCING A SEMICONDUCTOR LAYER SEQUENCE
Title (en)
SEMICONDUCTOR COMPONENT, SUBSTRATE AND METHOD FOR PRODUCING A SEMICONDUCTOR LAYER SEQUENCE
Title (de)
HALBLEITERBAUELEMENT, SUBSTRAT UND VERFAHREN ZUR HERSTELLUNG EINER HALBLEITERSCHICHTENFOLGE
Title (fr)
COMPOSANT SEMI-CONDUCTEUR, SUBSTRAT ET PROCÉDÉ DE FABRICATION D'UNE SUCCESSION DE COUCHES SEMI-CONDUCTRICES
Publication
Application
Priority
- DE 102010027411 A 20100715
- EP 2011061523 W 20110707
Abstract (en)
[origin: WO2012007350A1] The invention relates to a semiconductor component (1), comprising a semiconductor body (2), which is based on a nitride compound semiconductor material, and a substrate (3), on which the semiconductor body is disposed. Impurities are deliberately formed in the substrate. The invention further relates to a substrate and to a method for producing a semiconductor layer sequence (20) for a semiconductor component (1).
IPC 8 full level
H01L 21/02 (2006.01); H01L 21/20 (2006.01)
CPC (source: EP KR US)
C30B 25/18 (2013.01 - EP US); C30B 29/403 (2013.01 - EP US); H01L 21/02 (2013.01 - KR); H01L 21/02381 (2013.01 - EP US); H01L 21/02433 (2013.01 - EP US); H01L 21/02458 (2013.01 - EP US); H01L 21/02505 (2013.01 - EP US); H01L 21/0254 (2013.01 - EP US); H01L 21/20 (2013.01 - KR); H01L 29/267 (2013.01 - US); H01L 33/007 (2013.01 - EP US); H01L 33/02 (2013.01 - EP US); H01L 33/0093 (2020.05 - EP US); H01L 33/382 (2013.01 - EP US)
Citation (search report)
See references of WO 2012007350A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
DE 102010027411 A1 20120119; CN 103003917 A 20130327; EP 2593963 A1 20130522; KR 20130044324 A 20130502; TW 201205647 A 20120201; US 2013200432 A1 20130808; WO 2012007350 A1 20120119
DOCDB simple family (application)
DE 102010027411 A 20100715; CN 201180034932 A 20110707; EP 11745713 A 20110707; EP 2011061523 W 20110707; KR 20137003799 A 20110707; TW 100124746 A 20110713; US 201113809642 A 20110707