EP 2599119 A1 20130605 - COMPENSATION FOR STRESS INDUCED RESISTANCE VARIATIONS
Title (en)
COMPENSATION FOR STRESS INDUCED RESISTANCE VARIATIONS
Title (de)
KOMPENSATION VON SPANNUNGSINDUZIERTEN WIDERSTANDSVERÄNDERUNGEN
Title (fr)
COMPENSATION DE VARIATION DE RÉSISTANCE INDUITES PAR UNE CONTRAINTE
Publication
Application
Priority
- GB 201012656 A 20100728
- GB 2011051434 W 20110727
Abstract (en)
[origin: WO2012013977A1] According to the invention there is provided a method of compensating for stress induced variations in the resistance of a semiconductor resistor element, the method including the steps of: providing a semiconductor device which includes the semiconductor resistor element and a reference arrangement, in which the reference arrangement includes a metallic reference resistor (30) and a semiconductor reference resistor (32); generating a compensation parameter by measuring stress induced changes in the resistances of the metallic reference resistor and the semiconductor reference resistor, or at least one quantity functionally related thereto; and using the compensation parameter to compensate for stress induced variations in the resistance of the semiconductor resistor element.
IPC 8 full level
G01D 3/036 (2006.01); G01L 5/00 (2006.01); H01L 23/544 (2006.01); H03K 3/011 (2006.01)
CPC (source: EP)
G01D 3/0365 (2013.01); G01L 1/26 (2013.01); H01L 22/34 (2013.01); H03K 3/011 (2013.01)
Citation (search report)
See references of WO 2012013977A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2012013977 A1 20120202; CN 103125021 A 20130529; EP 2599119 A1 20130605; GB 201012656 D0 20100915; JP 2013535832 A 20130912
DOCDB simple family (application)
GB 2011051434 W 20110727; CN 201180046664 A 20110727; EP 11754462 A 20110727; GB 201012656 A 20100728; JP 2013521220 A 20110727