Global Patent Index - EP 2599760 A1

EP 2599760 A1 20130605 - Ceramic, graded resistivity monolith using the ceramic, and method of making

Title (en)

Ceramic, graded resistivity monolith using the ceramic, and method of making

Title (de)

Keramik, Monolith mit abgestuftem Widerstand mit der Keramik und Herstellungsverfahren

Title (fr)

Monolithe en céramique à résistivité à gradient utilisant la céramique et procédé de fabrication

Publication

EP 2599760 A1 20130605 (EN)

Application

EP 12194916 A 20121129

Priority

IN 1430CH2011 A 20111130

Abstract (en)

According to one embodiment, a monolithic cassette (200) with graded electrical resistivity is presented. The monolithic cassette (200) has a continuous grain structure between a first end (202) (202) and a second end (204) (204); wherein electrical resistivity of the monolithic cassette (200) is graded such that the resistance varies continuously from the first end (202) to the second end (204). Methods and compositions for forming the monolithic cassette (200) are also presented.

IPC 8 full level

C04B 35/453 (2006.01); H01C 7/112 (2006.01); H01C 17/00 (2006.01)

CPC (source: EP)

C22C 29/00 (2013.01); C22C 32/00 (2013.01); H01C 7/112 (2013.01); H01C 8/00 (2013.01); B22F 2999/00 (2013.01); C22C 29/12 (2013.01); C22C 32/0021 (2013.01)

Citation (search report)

  • [X] FR 2581790 A1 19861114 - STOPCIRCUIT SA [FR]
  • [X] DE 3147260 A1 19830601 - BBC BROWN BOVERI & CIE [DE]
  • [X] EP 0517618 A1 19921209 - STOPCIRCUIT SA [FR]
  • [X] US 2956255 A 19601011 - RAGNVALD MAARTMANN-MOE
  • [X] VOLINTIRU I ET AL: "Evolution of the electrical and structural properties during the growth of Al doped ZnO films by remote plasma-enhanced metalorganic chemical vapor deposition", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 102, no. 4, 043709, 27 August 2007 (2007-08-27), pages 1 - 9, XP012101527, ISSN: 0021-8979, DOI: 10.1063/1.2772569
  • [X] CHUNG ET AL: "The influence of titanium on the properties of zinc oxide films deposited by radio frequency magnetron sputtering", APPLIED SURFACE SCIENCE, ELSEVIER, AMSTERDAM, NL, vol. 254, no. 9, 8 February 2008 (2008-02-08), pages 2615 - 2620, XP022472448, ISSN: 0169-4332, DOI: 10.1016/J.APSUSC.2007.09.094
  • [X] IMAI T ET AL: "Development of High Gradient Zinc Oxide Nonlinear Resistors and Their Application to Surge Arresters", IEEE TRANSACTIONS ON POWER DELIVERY, IEEE SERVICE CENTER, NEW YORK, NY, US, vol. 13, no. 4, 1 October 1998 (1998-10-01), pages 1182 - 1187, XP011049586, ISSN: 0885-8977
  • [X] WANG Y ET AL: "The preparation and properties of new silver-metal oxide graded composite electrical contact materials", KEY ENGINEERING MATERIALS, TRANS TECH PUBLICATIONS LTD., STAFA-ZURICH, CH, vol. 280-283, 1 January 2005 (2005-01-01), pages 1917 - 1920, XP009168114, ISSN: 1013-9826
  • [X] IZAKI M ET AL: "Preparation of functionally graded ZnO film by electrochemical reaction from an aqueous solution", MATERIALS SCIENCE FORUM, TRANS TECH PUBLICATIONS LTD- SWITZERLAND, CH, vol. 308-311, 1 January 1999 (1999-01-01), pages 290 - 294, XP009168111, ISSN: 0255-5476
  • [X] ITOH Y ET AL: "Thermal stress characteristics of a functionally graded ZnO element with high energy absorption capability", NIPPON KINZOKU GAKKAISHI - JOURNAL OF THE JAPAN INSTITUTE OF METALS, NIPPON KINZOKU GAKKAI, TOKYO, JP, vol. 63, no. 2, 1 January 1999 (1999-01-01), pages 160 - 166, XP009168110, ISSN: 0021-4876, DOI: 10.1063/1.4747942
  • [X] IZAKI M ET AL: "Characterization of functionally graded zinc oxide film prepared from aqueous solution by controlling cathode potential", NIPPON KINZOKU GAKKAISHI - JOURNAL OF THE JAPAN INSTITUTE OF METALS, NIPPON KINZOKU GAKKAI, TOKYO, JP, vol. 62, no. 11, 1 January 1999 (1999-01-01), pages 1063 - 1068, XP009168113, ISSN: 0021-4876
  • [XP] PONOMAREV M V; VERHEIJEN M A; KEUNING W; VAN DE SANDEN M C M; CREATORE M: "Controlling the resistivity gradient in chemical vapor deposition-deposited aluminum-doped zinc oxide", JOURNAL OF APPLIED PHYSICS, vol. 112, no. 4, 043708, 15 August 2012 (2012-08-15), pages 1 - 7, XP002694199, DOI: 10.1063/1.4747942

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

EP 2599760 A1 20130605; EP 2599760 B1 20160824

DOCDB simple family (application)

EP 12194916 A 20121129