EP 2606507 A1 20130626 - PSEUDO-SUBSTRATE FOR USE IN THE PRODUCTION OF SEMICONDUCTOR COMPONENTS AND METHOD FOR PRODUCING A PSEUDO-SUBSTRATE
Title (en)
PSEUDO-SUBSTRATE FOR USE IN THE PRODUCTION OF SEMICONDUCTOR COMPONENTS AND METHOD FOR PRODUCING A PSEUDO-SUBSTRATE
Title (de)
PSEUDOSUBSTRAT ZUR VERWENDUNG BEI DER HERSTELLUNG VON HALBLEITERBAUELEMENTEN UND VERFAHREN ZUR HERSTELLUNG EINES PSEUDOSUBSTRATES
Title (fr)
PSEUDO-SUBSTRAT DESTINÉ À ÊTRE UTILISÉ POUR LA FABRICATION DE COMPOSANTS À SEMI-CONDUCTEURS ET PROCÉDÉ DE FABRICATION D'UN PSEUDO-SUBSTRAT
Publication
Application
Priority
- DE 102010034886 A 20100819
- EP 2011004001 W 20110810
Abstract (en)
[origin: WO2012022442A1] The invention relates to a pseudo-substrate (1, 11) for use in the production of semiconductor components, comprising a carrier substrate (2, 12) having a crystalline structure and a first buffer (3, 13), which is arranged on a surface of the carrier substrate (2, 12), if appropriate on further intervening intermediate layers, wherein the first buffer (3, 13) is embodied as a single layer or as a multilayer system and comprises, at least at the surface facing away from the carrier substrate (2, 12), arsenic (As) and at least one of the elements aluminium (Al) and indium (In). The invention is characterized in that a second buffer (4, 14) is additionally arranged on a side of the first buffer (3, 13) facing away from the carrier substrate (2, 12), if appropriate on further intervening intermediate layers, said second buffer being embodied as a single layer or as a multilayer system, wherein the second buffer (4, 14) is embodied such that it comprises, at a first surface facing the first buffer (3, 13) arsenic and at least one of the elements aluminium and indium and comprises, at a second surface facing away from the first buffer (3, 13) antimony (Sb) and at least one of the elements aluminium and indium, and wherein the second buffer is embodied with a decreasing proportion of arsenic and with an increasing proportion of antimony in each case proceeding from the first surface towards the second surface. The invention furthermore relates to a method for producing a pseudo-substrate (1, 11).
IPC 8 full level
H01L 21/02 (2006.01); H01L 21/20 (2006.01); H01L 21/203 (2006.01)
CPC (source: EP US)
C23C 16/06 (2013.01 - US); H01L 21/02 (2013.01 - US); H01L 21/02104 (2013.01 - US); H01L 21/02395 (2013.01 - EP US); H01L 21/02463 (2013.01 - EP US); H01L 21/02466 (2013.01 - EP US); H01L 21/02502 (2013.01 - EP US); H01L 21/0251 (2013.01 - EP US); H01L 21/02549 (2013.01 - EP US); H01L 21/02631 (2013.01 - EP US); H01L 29/201 (2013.01 - EP US); H01L 29/205 (2013.01 - EP US); H01L 29/207 (2013.01 - EP US); H01L 29/7787 (2013.01 - EP US); H01L 29/66462 (2013.01 - EP US); Y10T 428/26 (2015.01 - EP US)
Citation (search report)
See references of WO 2012022442A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
DE 102010034886 A1 20120223; EP 2606507 A1 20130626; TW 201212227 A 20120316; US 2013143038 A1 20130606; US 9263248 B2 20160216; WO 2012022442 A1 20120223
DOCDB simple family (application)
DE 102010034886 A 20100819; EP 11758378 A 20110810; EP 2011004001 W 20110810; TW 100128524 A 20110810; US 201113817567 A 20110810