EP 2606511 A1 20130626 - OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING OPTOELECTRONIC SEMICONDUCTOR CHIPS
Title (en)
OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING OPTOELECTRONIC SEMICONDUCTOR CHIPS
Title (de)
OPTOELEKTRONISCHER HALBLEITERCHIP UND VERFAHREN ZUR HERSTELLUNG VON OPTOELEKTRONISCHEN HALBLEITERCHIPS
Title (fr)
PUCE SEMI-CONDUCTRICE OPTOÉLECTRONIQUE ET PROCÉDÉ DE FABRICATION DE PUCES SEMI-CONDUCTRICES OPTOÉLECTRONIQUES
Publication
Application
Priority
- DE 102010034665 A 20100818
- EP 2011063715 W 20110809
Abstract (en)
[origin: WO2012022657A1] An optoelectronic semiconductor chip (1) is specified, which comprises a carrier (5) and a semiconductor body (2) having a semiconductor layer sequence, said semiconductor body being arranged on the carrier (5), wherein an emission region (23) and a detection region (24) are formed in the semiconductor body (2) having the semiconductor layer sequence. The semiconductor layer sequence comprises an active region (20), which is arranged between a first semiconductor layer (21) and a second semiconductor layer (22) and is provided in the emission region (23) for generating radiation. The first semiconductor layer (21) is arranged on that side of the active region (20) which faces away from the carrier (5). The emission region (23) has a cutout (25) extending through the active region (20); the first semiconductor layer (21) is electrically conductively connected to a first contact (41) in the emission region (23) via a first connection layer (31), wherein the first connection layer (31) extends in the cutout (25) from the first semiconductor layer (21) in the direction of the carrier (5); the second semiconductor layer (22) is electrically conductively connected to a second contact (42) via a second connection layer (32). The detection region (24) is electrically conductively connected to an additional contact (43). A method for producing an optoelectronic semiconductor chip is furthermore specified.
IPC 8 full level
H01L 25/16 (2006.01); H01L 27/15 (2006.01); H01L 31/173 (2006.01); H01L 33/00 (2010.01); H01L 33/38 (2010.01); H05B 37/03 (2006.01)
CPC (source: EP KR US)
H01L 27/15 (2013.01 - EP US); H01L 31/153 (2013.01 - EP US); H01L 33/20 (2013.01 - KR); H01L 33/22 (2013.01 - KR); H01L 33/36 (2013.01 - KR); H01L 33/38 (2013.01 - KR); H01L 33/62 (2013.01 - US); H01L 33/0093 (2020.05 - EP US); H01L 33/382 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US)
Citation (search report)
See references of WO 2012022657A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
DE 102010034665 A1 20120223; CN 103069568 A 20130424; CN 103069568 B 20161026; EP 2606511 A1 20130626; JP 2013535850 A 20130912; JP 6104158 B2 20170329; KR 101762820 B1 20170804; KR 20130064786 A 20130618; TW 201212261 A 20120316; TW I505493 B 20151021; US 2013207156 A1 20130815; US 8878227 B2 20141104; WO 2012022657 A1 20120223
DOCDB simple family (application)
DE 102010034665 A 20100818; CN 201180040000 A 20110809; EP 11743810 A 20110809; EP 2011063715 W 20110809; JP 2013525231 A 20110809; KR 20137006678 A 20110809; TW 100128127 A 20110808; US 201113817210 A 20110809