EP 2608271 B1 20161019 - Shield Wrap for a Heterostructure Field Effect Transistor
Title (en)
Shield Wrap for a Heterostructure Field Effect Transistor
Title (de)
Schildumwicklung für einen Feldeffekttransistor mit Heterostruktur
Title (fr)
Enveloppe de protection pour transistor à effet de champ à structure hétérogène
Publication
Application
Priority
US 201113333843 A 20111221
Abstract (en)
[origin: EP2608271A1] Devices are disclosed for providing heterojunction field effect transistor (HFETs) having improved performance and/or reduced noise generation. A gate electrode is over a portion of the active region and is configured to modulate a conduction channel in the active region of an HFET. The active region is in a semiconductor film between a source electrode and a drain electrode. A first passivation film is over the active region. An encapsulation film is over the first passivation film. A first metal pattern on the encapsulation film includes a shield wrap over the majority of the active region and is electrically connected to the source electrode
IPC 8 full level
H01L 29/778 (2006.01)
CPC (source: EP US)
H01L 23/3135 (2013.01 - US); H01L 23/3171 (2013.01 - US); H01L 29/2003 (2013.01 - EP US); H01L 29/404 (2013.01 - US); H01L 29/7787 (2013.01 - EP US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
EP 2608271 A1 20130626; EP 2608271 B1 20161019; CN 103178106 A 20130626; CN 103178106 B 20161005; JP 2013131758 A 20130704; JP 6644456 B2 20200212; TW 201342594 A 20131016; TW I496286 B 20150811; US 10002957 B2 20180619; US 10199488 B2 20190205; US 2013161692 A1 20130627; US 2017098704 A1 20170406; US 2019214493 A1 20190711
DOCDB simple family (application)
EP 12195320 A 20121203; CN 201210552008 A 20121218; JP 2012278136 A 20121220; TW 101148577 A 20121220; US 201113333843 A 20111221; US 201615387510 A 20161221; US 201816228159 A 20181220