EP 2611952 A2 20130710 - SILICON SINGLE CRYSTAL DOPED WITH GALLIUM, INDIUM, OR ALUMINUM
Title (en)
SILICON SINGLE CRYSTAL DOPED WITH GALLIUM, INDIUM, OR ALUMINUM
Title (de)
MIT GALLIUM, INDIUM ODER ALUMINIUM DOTIERTER SILIZIUM-EINKRISTALL
Title (fr)
MONOCRISTAL DE SILICIUM DOPÉ AU GALLIUM, À L'INDIUM, OU À L'ALUMINIUM
Publication
Application
Priority
- US 40277610 P 20100903
- US 2011050226 W 20110901
Abstract (en)
[origin: US2012056135A1] A doped silicon single crystal having a resistivity variation along a longitudinal and/or radial axis of less than 10% and a method of preparing one or a sequential series of doped silicon crystals is disclosed. The method includes providing a melt material comprising silicon into a continuous Czochralski crystal growth apparatus, delivering a dopant, such as gallium, indium, or aluminum, to the melt material, providing a seed crystal into the melt material when the melt material is in molten form, and growing a doped silicon single crystal by withdrawing the seed crystal from the melt material. Additional melt material is provided to the apparatus during the growing step. A doping model for calculating the amount of dopant to be delivered into the melt material during one or more doping events, methods for delivering the dopant, and vessels and containers used to deliver the dopant are also disclosed.
IPC 8 full level
C30B 15/04 (2006.01); C30B 15/00 (2006.01); C30B 29/06 (2006.01); H01L 31/042 (2006.01)
CPC (source: EP KR US)
C30B 15/00 (2013.01 - KR); C30B 15/002 (2013.01 - EP KR US); C30B 15/02 (2013.01 - KR); C30B 15/04 (2013.01 - EP KR US); C30B 29/06 (2013.01 - EP KR US); H01L 31/042 (2013.01 - KR); Y02E 10/547 (2013.01 - EP)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
US 2012056135 A1 20120308; US 9051659 B2 20150609; CN 103249875 A 20130814; CN 103249875 B 20161012; EP 2611952 A2 20130710; EP 2611952 A4 20140122; EP 2611952 B1 20211229; JP 2013539451 A 20131024; JP 5934218 B2 20160615; KR 101841032 B1 20180322; KR 20140021508 A 20140220; MY 159737 A 20170131; TW 201213626 A 20120401; TW I526584 B 20160321; WO 2012031136 A2 20120308; WO 2012031136 A3 20120426
DOCDB simple family (application)
US 201113224019 A 20110901; CN 201180053157 A 20110901; EP 11822675 A 20110901; JP 2013527320 A 20110901; KR 20137008533 A 20110901; MY PI2013000751 A 20110901; TW 100131811 A 20110902; US 2011050226 W 20110901