Global Patent Index - EP 2617071 A1

EP 2617071 A1 20130724 - GALVANICALLY COATED OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT

Title (en)

GALVANICALLY COATED OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT

Title (de)

GALVANISCH BESCHICHTETES OPTOELEKTRONISCHES HALBLEITERBAUTEIL UND VERFAHREN ZUR HERSTELLUNG EINES OPTOELEKTRONISCHES HALBLEITERBAUTEILS

Title (fr)

COMPOSANT SEMICONDUCTEUR OPTOÉLECTRONIQUE AVEC REVÊTEMENT GALVANIQUE ET PROCÉDÉ DE FABRICATION D'UN COMPOSANT SEMICONDUCTEUR OPTOÉLECTRONIQUE

Publication

EP 2617071 A1 20130724 (DE)

Application

EP 11743492 A 20110727

Priority

  • DE 102010045390 A 20100915
  • EP 2011062916 W 20110727

Abstract (en)

[origin: WO2012034764A1] The invention relates to an optoelectronic semiconductor component, comprising a substrate-free optoelectronic semiconductor chip (1), which has a first main surface (1a) on an upper face and a second main surface (1b) on a lower face, and a metal carrier (2), which is arranged on the lower face of the optoelectronic semiconductor chip (1), wherein the metal carrier (2) protrudes over the optoelectronic semiconductor chip (1) in at least one lateral direction (1) and the metal carrier (2) is deposited on the second main surface (1b) of the optoelectronic semiconductor chip (1) using a galvanic or electroless plating method.

IPC 8 full level

H01L 33/62 (2010.01); H01L 33/00 (2010.01); H01L 33/48 (2010.01)

CPC (source: EP KR US)

H01L 33/00 (2013.01 - KR); H01L 33/0093 (2020.05 - EP US); H01L 33/48 (2013.01 - KR US); H01L 33/62 (2013.01 - EP KR US); H01L 33/647 (2013.01 - EP US); H01S 5/0217 (2013.01 - EP US); H01S 5/02355 (2021.01 - EP US); H01L 33/38 (2013.01 - EP US); H01L 33/486 (2013.01 - EP US); H01L 2224/48091 (2013.01 - EP US); H01L 2224/48247 (2013.01 - EP US); H01L 2924/01068 (2013.01 - EP US); H01L 2933/0016 (2013.01 - EP US)

C-Set (source: EP US)

H01L 2224/48091 + H01L 2924/00014

Citation (search report)

See references of WO 2012034764A1

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

DE 102010045390 A1 20120315; CN 103140948 A 20130605; CN 103140948 B 20160511; EP 2617071 A1 20130724; KR 101505336 B1 20150323; KR 20130054414 A 20130524; US 2013240918 A1 20130919; US 9041020 B2 20150526; WO 2012034764 A1 20120322

DOCDB simple family (application)

DE 102010045390 A 20100915; CN 201180044634 A 20110727; EP 11743492 A 20110727; EP 2011062916 W 20110727; KR 20137008900 A 20110727; US 201113823726 A 20110727